High-quality InAlAs layers grown on (411)A-oriented InP substrates by molecular beam epitaxy

Kitada, Takahiro; Nii, Keisuke; Hiraoka, Tetsuya; Shimomura, S.; Hiyamizu, S.

doi:10.1116/1.590778

Cited by 4 publications

(1 citation statement)

References 9 publications

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“…11 Thus, the observed redshifts of PL peaks from the (411)A QWs with decreasing T s can be well explained by improved InGaAs/AlGaAs interface abruptness, resulting from suppressed surface segregation of In atoms under the low T s . 11 Thus, the observed redshifts of PL peaks from the (411)A QWs with decreasing T s can be well explained by improved InGaAs/AlGaAs interface abruptness, resulting from suppressed surface segregation of In atoms under the low T s .…”

Section: Photoluminescencementioning

confidence: 81%

Improved interface abruptness in pseudomorphic InGaAs/AlGaAs quantum wells with (411)A superflat interfaces grown by molecular beam epitaxy

Kitada

Nii

Hiraoka

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inOn overannealing of GaIn(N)As/Ga(N)As multiple quantum wells grown by molecular beam epitaxy Much improved flat interfaces of In Ga As ∕ Al As Sb quantum well structures grown on ( 411 ) A InP substrates by molecular-beam epitaxya)Mobility enhancement by reduced remote impurity scattering in a pseudomorphic In 0.7 Ga 0.3 As/In 0.52 Al 0.48 As quantum well high electron mobility transistor structure with (411)A super-flat interfaces grown by molecularbeam epitaxy Super-flat interfaces in pseudomorphic In 0.72 Ga 0.28 As/In 0.52 Al 0.48 As quantum wells grown on (411)A InP substrates by molecular beam epitaxy Larger critical thickness determined by photoluminescence measurements in pseudomorphic In 0.25 Ga 0.75 As/Al 0.32 Ga 0.68 As quantum well grown on (411)A GaAs substrates by molecular beam epitaxy Improved interface abruptness was achieved in pseudomorphic In x Ga 1Ϫx As/Al 0.34 Ga 0.66 As quantum wells ͑QWs͒ (xӍ0.2) with extremely flat interfaces over a wafer-size area ͓(411)A superflat interfaces͔ grown on (411)A GaAs substrates by decreasing the substrate temperature T s under a low V/III ratio during molecular beam epitaxy ͑MBE͒. Significant redshifts of low-temperature ͑12 K͒ photoluminescence ͑PL͒ peaks were observed for the (411)A and simultaneously grown ͑100͒ QWs with decreasing T s because of the improved interface abruptness resulting from suppressed surface segregation of In atoms during MBE. Full widths at half maximum ͑FWHMs͒ of the PL peaks from the (411)A QWs grown at T s ϭ450-540°C under the low V/III ͓As 4 /͑GaϩIn͔͒ pressure ratio of 10 showed almost no dependence on T s , and were 20%-30% smaller than the best PL FWHMs of the corresponding ͑100͒ QWs of this study, indicating that the (411)A InGaAs/AlGaAs superflat interfaces can be successfully formed even for the low T s of 450°C.

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Section: Photoluminescencementioning

confidence: 81%