High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy

Abstract

High temperature step-flow growth of gallium phosphide by molecular beam epitaxy and metalorganic chemical vapor deposition Appl. Phys. Lett. 99, 141905 (2011) Unintentional incorporation of hydrogen in wurtzite InN with different surface orientations J. Appl. Phys. 110, 063535 (2011) Scanning capacitance microscopy of ErAs nanoparticles embedded in GaAs pn junctions Appl. Phys. Lett. 99, 133114 (2011) Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si (111) substrates Appl. Phys. Lett. 99, 131108 (2011) A low energy electron microscopy study of the initial growth, structure, and thermal stability of 4,4-biphenyldicarboxylic acid domains on Cu (001)

Luminescence from two-dimensional electron gases in InAlN/GaN heterostructures with different In content

“…3,4 The use of InAlN layers offers several attractive advantages, such as a strong spontaneous polarization that induces an extremely high sheet carrier charge density in the two-dimensional-electron-gas (2DEG) (about 3.5 Â 10 13 cm À2 for 14 nm thick Al 0.93 In 0.07 N barriers), 5,6 and a strain-free heterojunction that could reduce structural defects caused by the lattice mismatch. 7,8 Moreover, due to their relatively high difference in refractive indices and the possibility of lattice matching, InAlN/GaN multilayer stacks with quarter-wave layers are a very promising approach for distributed Bragg mirrors 9 and its application in nitride microcavity light-emitting diodes. 10 Regardless of the final application, investigations on both the electrical and optical properties of the 2DEG are crucial for understanding the intrinsic properties of the InAlN/GaN heterostructures, which is the bottleneck to advance the nitride electronics technology.…”

Importance of growth temperature on achieving lattice-matched and strained InAlN/GaN heterostructure by plasma-assisted molecular beam epitaxy

“…However, in the recent past, impressive efforts have been made in the developments of InAlN-GaN heterostructures using both MBE and MOCVD. [6][7][8] The major challenge in realizing high quality InAlN epitaxial layer is to achieve crack-free, highly homogeneous composition with smooth morphology. Besides, the compositional induced structural variations of InAlN layers have a strong impact on electrical and optical properties, and thus on the device performance.…”

Validity of Vegard’s rule for Al1−xInxN (0.08 < x < 0.28) thin films grown on GaN templates

“…For growth by metal organic chemical vapour deposition (MOCVD), quality quickly deteriorates for InN contents above ~30% due to strain relaxation and phase separation [8,9]. Ternaries with high InN contents are more readily obtained by low temperature growth techniques such as molecular beam epitaxy (MBE) [10][11][12][13] or reactive frequency magnetron sputtering (RFMS) [14][15][16][17][18][19]. On the other hand, many MOCVD groups have grown high quality Al 1−x In x N/GaN in the near-lattice-matched region [3,8,[20][21][22][23][24][25][26].…”