High-Quality InAsSb Nanowires Grown by Catalyst-Free Selective-Area Metal–Organic Chemical Vapor Deposition

Abstract

We report on the first demonstration of InAs1-xSbx nanowires grown by catalyst-free selective-area metal-organic chemical vapor deposition (SA-MOCVD). Antimony composition as high as 15 % is achieved, with strong photoluminescence at all compositions. The quality of the material is assessed by comparing the photoluminescence (PL) peak full-width at half-max (fwhm) of the nanowires to that of epitaxially grown InAsSb thin films on InAs. We find that the fwhm of the nanowires is only a few meV broader than epitaxial films, and a similar trend of relatively constant fwhm for increasing antimony composition is observed. Furthermore, the PL peak energy shows a strong dependence on temperature, suggesting wave-vector conserving transitions are responsible for the observed PL in spite of lattice mismatched growth on InAs substrate. This study shows that high-quality InAsSb nanowires can be grown by SA-MOCVD on lattice mismatched substrate, resulting in material suitable for infrared detectors and high-performance nanoelectronic devices.

High Electron Mobility and Insights into Temperature-Dependent Scattering Mechanisms in InAsSb Nanowires

“…bowing parameter. The solid curve inFigure 1(b) shows Equation 1 calculated by setting the bandgaps of InSb and InAs to their bulk values of E InSb = 235 meV and E InAs = 415 meV at 6 K and setting the bowing parameter to C = 662 meV 40,43. This value has previously been determined experimentally for similar InAsSb nanowire structures and coincides well with the established value of bulk InAsSb at 700 meV 44.…”

Axial InAs(Sb) inserts in selective-area InAsP nanowires on InP for optoelectronics beyond 25 µm

“…The antimony composition is estimated to be between 0.08 and 0.10 based on previous growth studies of InAsSb nanowires [16,26]. Additionally, the full-width half-max (FWHM) of the InAsSb peak is 73.7 meV, higher than the value obtained from InAsSb bulk nanowires, which is about 45.0 meV [26]. This might be due to a nonuniform antimony composition across the insert segment.…”

“…We note that the peak energy of InAsSb is shifted from 0.390 eV to a lower energy of 0.335 eV (3.70 µm), which results from a relaxation of Fermi-level pinning at the surface of InAsSb inserts. The antimony composition is estimated to be between 0.08 and 0.10 based on previous growth studies of InAsSb nanowires [16,26]. Additionally, the full-width half-max (FWHM) of the InAsSb peak is 73.7 meV, higher than the value obtained from InAsSb bulk nanowires, which is about 45.0 meV [26].…”

Growth of metal chalcogenide nanomaterials and their characterizations

“…Figure 2.31b shows such a case, using the growth of InAs based NWs as an example. 97 These NWs show flat top surface after growth. To explain the disappearance of catalyst particles, researchers have proposed two models.…”

“…[96][97][98][99][100] In a typical self-catalysed growth, one of the reactants (normally the one with low melting point) agglomerates first to form nuclei (droplet), which then absorbs vapour reactants to grow unidirectional nanostructure by VS/VLS mechanism. Such self-catalysed mechanism has been widely observed and adopted in III-V NW growth.…”