High quality InP and In1−xGaxAsyP1−y grown by gas source MBE

Group V incorporation in InGaAsP grown on InP by gas source molecular beam epitaxy

“…1, particularly the filled data points from Lambert et al, 2 suggests that a quantitative model for the group V incorporation in InGaAsP is possible. An accurate incorporation model, however, must consider the influence of numerous growth conditions.…”

“…Typically, in gas source molecular beam epitaxy ͑GSMBE͒ and chemical beam epitaxy ͑CBE͒, the group V species are supplied primarily in the form of As 2 and P 2 from the cracking of arsine ͑AsH 3 ͒ and phosphine ͑PH 3 ͒ in a high temperature ͑Ϸ1000°C͒ cell. Figure 1 shows the results of several authors [1][2][3][4][5][6][7] in which the As content in the solid, y, is plotted as a function of the arsine flow fraction, Y ϭF͑AsH 3 ͒/͓F͑AsH 3 ͒ϩF͑PH 3 ͔͒, where F denotes the hydride flow inputs to the cracker cell. Data are shown for lattice-matched InGaAsP layers grown on ͑100͒ InP substrates by GSMBE ͑open and filled data points͒ and CBE ͑designated by ϩ and ϫ͒.…”

Gas source molecular beam epitaxy growth of high quality InGaAsP for 0.98 μm Al-free InGaAs/InGaAsP/InGaP laser diodes

“…Strained and lattice-matched InGaAsP epilayers grown on InP substrates for wavelength ranges of 1300-1550 nm have been well studied [1][2][3][4][5] and widely applied to devices for optical fiber communications. Strained and lattice-matched InGaAsP epilayers grown on InP substrates for wavelength ranges of 1300-1550 nm have been well studied [1][2][3][4][5] and widely applied to devices for optical fiber communications.…”

Surface morphology of InP thin films grown on InP(001) by solid source molecular beam epitaxy

“…These early problems with the MBE growth of InP have resulted in the majority of InP thin film structures being grown from metal-organic and hydride-based precursors using either metal-organic vapour phase epitaxy (MOVPE) [6] or gas source molecular beam epitaxy (GSMBE) [7]. However, these growth techniques provide a different set of problems to MBE due to their use of environmentally unfriendly gaseous precursors that are generally toxic and difficult to handle.…”