High-quality InSb nanocrystals: synthesis and application in graphene-based near-infrared photodetectors

Abstract

InSb nanocrystals are synthesized by CVD method. A high photoresponsivity at 1550 nm is achieved in InSb/graphene hybrid structure.

Ultralow Dark Current Room‐Temperature Infrared Photodetector Based on InSb Nanosheets/MoS2 Van der Waals Heterostructure

“…quantum efficiency and responsivity of InSb, InSb detectors are widely used in infrared (IR) photodetectors. [12][13][14][15][16][17][18] However, the InSb photodetectors usually work at 77 K to suppress the high dark current, which greatly restricts their application. Due to the phonon scattering effect, the lifetime of photogenerated carriers in low-dimensional nanoscale photodetectors is extended and the dark current is significantly reduced.…”

Rapid, facile synthesis of InSb twinning superlattice nanowires with a high-frequency photoconductivity response

“…18,22 In recent years, the crystal-phase control of zinc-blende (ZB) and wurtzite (WZ) crystal phase with a long-range periodic sequence, namely twinning superlattices (TSLs), has been intensively discussed in various III-V nanowires such as InP, 20, 23 InAs, 24 GaP 21 and GaAs 25,26 can successfully promote the formation of unique electronic mini-bands and the modication of the density of states, 27 which may be potentially useful for bandgap and phonon engineering in future high-performance NWs-based devices. 28 Among the known binary III-V compound semiconductors, indium antimonide (InSb) has a narrow direct band gap energy (0.17 eV), low thermal conductivities (0.18 W cm À1 K À1 ), small exciton binding energy (0.5 meV), and extremely high electron mobilities (78 000 cm 2 V À1 s À1 ) at room temperature, 29,30 consequently making it the suitable material for infrared photodetectors, topological superconductivity and a promising platform for quantum computing. [31][32][33] To date, InSb nanowires have been generally synthesized by epitaxial growth methods (>400 C) including metal-organic vapor phase epitaxy (MOVPE), 34,35 chemical beam epitaxy (CBE) and molecular beam epitaxy (MBE) via the vapor-liquid-solid (VLS) mechanism.…”

Effect of Recrystallization on β to α-Sn Allotropic Transition in 99.3Sn–0.7Cu wt. % Solder Alloy Inoculated with InSb

“…InSb and CdTe are widely used in microelectronics. The high electron mobility and small direct bandgap of InSb make it an attractive material for infrared optoelectronics and high-speed electronics [17], while CdTe is used in photovoltaic solar cells [18,19]. Therefore, these materials can come into contact with Sn-based solder joints.…”