High-quality perovskite toward planar MA0.6FA0.4PbI3-xClx-β-NaYF4:Yb/Er of strong responsivity in photodetector application

Zhang, Dan; Chen, Chunyang; Huang, Jin; Wang, Hao; Feng, Yun; He, Shuixiang

doi:10.1016/j.optmat.2023.113655

Cited by 2 publications

(1 citation statement)

References 45 publications

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“…The bulk defect density of 3D absorber layer is from 1×10 10 to 1×10 16 cm −3 (table 1). Because, defect density of MAPbI 3 single crystal could be as low as 1×10 10 cm −3 and defect density of polycrystalline MAPbI 3 was around 1×10 16 cm −3 [36,37]. The thickness of 3D absorbing layer is 200 μm to simulate the thick film based-devices utilized for x-ray detection [4].…”

Section: Device Structures and Simulation Parametersmentioning

confidence: 99%

Numerical modeling of defects induced dark current in halide perovskite X-ray detectors

Yang,

Xie,

Zeng

et al. 2024

Phys. Scr.

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Metal halide perovskites have been widely used in X-ray detection due to their outstanding optoelectronic properties. However, the dark current of perovskite X-ray detectors is not appreciably low for integration on thin-film transistors pixel circuits and thus limits their applications in X-ray imaging. Based on numerical models, we investigate the correlation between the dark current and defects of perovskite X-ray detectors. The deep-level defects are the major factor to induce dark current, which has a proportional relation to the defect density. Compared to deep-level defects, the dark current induced by shallow-level defects depends on both of defect energy level and defect density. At last, simulation results present a guidance to engineer defects with suitable values of density and energy level, which yields desirably low dark current. This work provides implications and theoretical guidance for the optimization of defects in halide perovskites, which is believed to assist the further development of X-ray detectors with a low dark current density.

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Section: Device Structures and Simulation Parametersmentioning

confidence: 99%

Numerical modeling of defects induced dark current in halide perovskite X-ray detectors

Yang,

Xie,

Zeng

et al. 2024

Phys. Scr.

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Near-Infrared Organic–Inorganic Copper Halide Film with Spectral Response over 1400 nm for Photodetector Application

Li,

Chen,

et al. 2024

ACS Appl. Electron. Mater.

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Organic−inorganic metal halides (OIMHs) have emerged as promising light absorbers for photodetector applications, especially Cu-based OIMHs. Herein, a novel Cu-based OIMH named (BA) 4 Cu II (Cu I In III ) 0.5 Cl 8 has been synthesized by an ethanol assisted stirring method as powders, and a film sample has further been fabricated by a one step spin-coating method. (BA) 4 Cu II (Cu I In III ) 0.5 Cl 8 exhibits a broadband absorption spectrum, peaking at 375, 620, as well as 875 nm, and a cutoff wavelength up to 1400 nm. In particular, a simple photoconductive photodetector based on the (BA) 4 Cu II (Cu I In III ) 0.5 Cl 8 film as an absorber is first realized. The responsivity (R) and detectivity (D*) are as high as 2.6 × 10 −5 A/W and 7 × 10 8 Jones at 980 nm, respectively. The measured linear dynamic range (LDR) is calculated to be 29 dB. Besides, a flexible photodetector with a polyvinyl chloride (PVC) substrate has been fabricated with a bending angle exceeding 90°, and the device can still work stably even after 80 bending cycles. This work provides a novel strategy to realize the high absorption of metal halides in the NIR region and highlights its potential in detection and imaging applications.

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High-quality perovskite toward planar MA0.6FA0.4PbI3-xClx-β-NaYF4:Yb/Er of strong responsivity in photodetector application

Cited by 2 publications

References 45 publications

Numerical modeling of defects induced dark current in halide perovskite X-ray detectors

Numerical modeling of defects induced dark current in halide perovskite X-ray detectors

Near-Infrared Organic–Inorganic Copper Halide Film with Spectral Response over 1400 nm for Photodetector Application

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