High-Quality Polycrystalline Silicon Film Crystallized from Amorphous Silicon Film using NiCl₂Vapor

Abstract

The development of high-quality polycrystalline silicon film is of interest for active-matrix organic light-emitting displays. Here, NiCl 2 vapor was applied for the first time to enhance the crystallization of amorphous silicon film. The crystallization of amorphous Si showed that round-shaped Si grains grow and become impinged to form polyhedral-shaped grains with diameters of 10 to 25 μm. It was found that the growth of large grains was possible via the merging of fine needle grains with the same directional growth. The crystallized film showed a high degree of crystallinity and a very smooth surface with a roughness of 0.53 nm. The field-effect hole mobility and subthreshold swing of the p-channel thin-film transistor fabricated using the poly-Si film were 113 cm 2 /V • s and 0.4 V/decade, respectively. The high performance of the thin-film transistor is attributed to the large grain size, the high crystallinity, the low Ni contamination and the smooth surface of the poly-Si film crystallized in NiCl 2 vapor.

Semimicro-size agglomerate structured silicon-carbon composite as an anode material for high performance lithium-ion batteries

“…The peak appeared around 944 cm -1 is attributed to the formation of native Si-O on the surface of Si nanoparticle [27]. Considering the typical position of bulk Si at 520 cm -1 , blue shifted position of Si peak in this work can be attributed to size dependent phonon confinement effect and polycrystalline nature of our Si [27]. What is more, as shown in Fig.…”

“…1b displays Raman spectra for mSi-PAA and mSi-C composite (before and after carbon coating). Three peaks appeared at 297, 513, 517 and 944 cm -1 for both mSi-PAA and mSi-C correspond to characteristic peaks of Si [27]. Small and broad peak around at 297 cm -1 are assigned as the 2 nd order acoustic phonon mode of Si while strong and sharp peak around 513 or 517 cm -1 can be assigned to the 1 st order optical phonon mode of crystalline Si [27].…”

“…Three peaks appeared at 297, 513, 517 and 944 cm -1 for both mSi-PAA and mSi-C correspond to characteristic peaks of Si [27]. Small and broad peak around at 297 cm -1 are assigned as the 2 nd order acoustic phonon mode of Si while strong and sharp peak around 513 or 517 cm -1 can be assigned to the 1 st order optical phonon mode of crystalline Si [27]. The peak appeared around 944 cm -1 is attributed to the formation of native Si-O on the surface of Si nanoparticle [27].…”

“…Small and broad peak around at 297 cm -1 are assigned as the 2 nd order acoustic phonon mode of Si while strong and sharp peak around 513 or 517 cm -1 can be assigned to the 1 st order optical phonon mode of crystalline Si [27]. The peak appeared around 944 cm -1 is attributed to the formation of native Si-O on the surface of Si nanoparticle [27]. Considering the typical position of bulk Si at 520 cm -1 , blue shifted position of Si peak in this work can be attributed to size dependent phonon confinement effect and polycrystalline nature of our Si [27].…”

A Stretchable Graphitic Carbon/Si Anode Enabled by Conformal Coating of a Self‐Healing Elastic Polymer

“…Usually, crystalized Si is located at ≈520 cm −1 in the Raman spectrum. The existence of a broad peak at ≈475 cm −1 indicates the amorphous Si structure (Figure c) . The digital images show that the grey carbon foam turns blue after the CVD deposition of Si layer (Inset of Figure d and Figure S4, Supporting Information).…”