High-quality remote plasma enhanced atomic layer deposition of aluminum oxide thin films for nanoelectronics applications

Khosla, Robin; Schwarz, Daniel; Funk, Hannes S.; Guguieva, Kateryna; Schulze, Jörg

doi:10.1016/j.sse.2021.108027

Cited by 14 publications

(6 citation statements)

References 52 publications

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“…[34] The curing effect for D it by Alnealing was also expected to a certain extent, as reductions for Al=SiO 2 =Si-based structures are reported in earlier works. [5,15,19,34,43] Furthermore, a similar reduction in D it of Al/Al 2 O 3 =Si MOS structures with sputtered Al films was recently reported by Khosla et al [44] The improvement could be explained by hydrogen species, which diffuse to the oxide-semiconductor interface and terminate the dangling bonds at the interface, as done for SiO 2 =Si interfaces. [5,32,34,43,45] Those hydrogen species form, when water, introduced to the system as traces of moisture, reacts with the Al during annealing.…”

Section: Impact Of Alnealsupporting

confidence: 68%

Quantifying the Impact of Al Deposition Method on Underlying Al₂O₃/Si Interface Quality

Mack,

Rosta,

Quliyeva

et al. 2023

Physica Status Solidi (a)

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Oxide‐semiconductor interface quality has often a direct impact on the electrical properties of devices and on their performance. Traditionally, the properties are characterised through metal‐oxide‐semiconductor (MOS) structures by depositing a metal layer and measuring the capacitance‐voltage (C‐V) characteristics. However, metal deposition process itself may have an impact on the oxide and the oxide‐semiconductor interface. The impact of magnetron sputtering, e‐beam evaporation, and thermal evaporation on an Al2O3/Si interface was studied, where atomic layer deposited (ALD) Al2O3 was used, by MOS C‐V and Corona Oxide Characterization of Semiconductors (COCOS) measurements. The latter allows characterisation of the interface also in its original state before metallisation. The results show that sputtering induces significant damage at the underlaying Al2O3/Si interface as the measured interface defect density Dit increases from 1011 cm−2eV to 1013 cm−2eV. Interestingly, sputtering also generates a high density of positive charges Qtot at the interface as the charge changes from −2⋅1012 cm−2 to +7⋅1012 cm−2. Thermal evaporation is found to be a softer method, with modest impact on Dit and Qtot. Finally, we show that Alnealing heals the damage but has also a significant impact on the charge of the film recovering the characteristic negative charge of Al2O3 (∽–4⋅1012 cm−2).This article is protected by copyright. All rights reserved.

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Section: Impact Of Alnealsupporting

confidence: 68%

Quantifying the Impact of Al Deposition Method on Underlying Al₂O₃/Si Interface Quality

Mack,

Rosta,

Quliyeva

et al. 2023

Physica Status Solidi (a)

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“…For all our samples, we observe relative high threshold voltages V T independent of temperature. Here, we assume the origin of this behavior to lie in the heterostructures themselves, since our ALD process has previously shown to enable the deposition of hysteresis-free gate oxides that do not exhibit any significant shift in threshold voltages V T [30]. A recessetching through the MOD-doped layer together with further reduction of gate-oxide thickness might be a strategy to reduce threshold voltages.…”

Section: Resultsmentioning

confidence: 99%

High mobility Ge 2DHG based MODFETs for low-temperature applications

Weißhaupt

Funk

Oehme

et al. 2023

Semicond. Sci. Technol.

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- Modulation-doped field-effect transistors (MODFET) that are typically based on either a two-dimensional electron gas (2DEG) or a two-dimensional hole gas (2DHG) are highly suitable for low-temperature applications due to the high mobilities attained by the charge carriers in the device channel. The Ge 2DHG is particularly interesting, since Ge exhibits the highest hole mobility among all semiconductors. In this paper, we report on the temperature-dependent direct current (DC)-characteristics of normally-on MODFETs based on a high mobility Ge 2DHG. Here, we specifically investigate device characteristics down to cryogenic temperatures and analyse the impact of different MOD-doping on device performance. We find that the largest On-Off ratio of I On/I Off = 3.2⋅106 and lowest Sub-Threshold Swing (SS) of (SS) of SS = 64 mV/dec at a temperature of T = 7.5 K are attained for a MOD-doping of N A = 5⋅1017 cm-3, while the highest effective mobility µ eff = 864 cm2/Vs is obtained from a device with a MOD-doping of N A = 1.1⋅1018 cm-3. Furthermore, while effective mobilities in the devices are strongly reduced compared to Hall mobilities measured in the unstructured Ge 2DHGs, both quantities can be seen to follow a similar trend. Our results motivate further investigations of Ge 2DHG MODFETs for applications in cryogenic low-noise amplifiers, besides their well-established potential for spintronic applications.

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“…FA high in alumina content is needed to fabricate the ceramic tile (Ahmad et al, 2021a). It is an electrical insulator used as a substrate for integrated circuits (Khosla et al, 2021). The percentages of Al 2 O 3 were 4.4% (OPC), 18.41% (FA), 17.91% (CBA, 45 µm), and 17.43% (CBA, 75 µm).…”

Section: Resultsmentioning

confidence: 99%

“…The FA is high in alumina content which is needed to fabricate the ceramic tile (Ahmad et al, 2021b). It is an electrical insulator used as a substrate for integrated circuits (Khosla et al, 2021).…”

Section: Discussionmentioning

confidence: 99%

Sustainable Energy Recovery From the Malaysian Coal Bottom Ash and the Effects of Fineness in Improving Concrete Properties

et al. 2022

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The particle size (µm) of coal bottom ash displayed significant effects on the concrete engineering properties. This research aims to assess the improvement of engineering properties of concrete containing CBA (fineness: 75 and 100 µm) known as Mix 75 and Mix 100, and to optimize the percentage of coal bottom ash as supplementary cement materials in concrete. The physicochemical properties of coal bottom ash were analyzed using X-ray fluorescence, X-ray diffraction, particle size distribution (PSD), and a scanning electron microscope. The strength of concrete was determined based on workability and compressive and splitting tensile strengths. The concrete strength improvement was optimized by response surface methodology. The results of the study showed that coal bottom ash was rich in silicates based on the highest peak at 45°. The scanning electron microscope images showed that coal bottom ash has few cenospheres and components of irregular-shaped char particles. The splitting tensile strengths in 28 curing days gradually decreased with an increase in coal bottom ash. The optimal percentage of coal bottom ash in Mix 75 is equivalent to 6% within 45.4 curing days producing 40 MPa of compressive strength. Meanwhile, the optimal percentage of CBA in Mix 100 is equivalent to 12% within 56 curing days producing 50 MPa of compressive strength. The future works needed to extend the experimental observations are the economic analysis and effect of the greenhouse reduction on the usage of CBA in building infrastructure.

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High-quality remote plasma enhanced atomic layer deposition of aluminum oxide thin films for nanoelectronics applications

Cited by 14 publications

References 52 publications

Quantifying the Impact of Al Deposition Method on Underlying Al₂O₃/Si Interface Quality

Quantifying the Impact of Al Deposition Method on Underlying Al₂O₃/Si Interface Quality

High mobility Ge 2DHG based MODFETs for low-temperature applications

Sustainable Energy Recovery From the Malaysian Coal Bottom Ash and the Effects of Fineness in Improving Concrete Properties

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High-quality remote plasma enhanced atomic layer deposition of aluminum oxide thin films for nanoelectronics applications

Cited by 14 publications

References 52 publications

Quantifying the Impact of Al Deposition Method on Underlying Al2O3/Si Interface Quality

Quantifying the Impact of Al Deposition Method on Underlying Al2O3/Si Interface Quality

High mobility Ge 2DHG based MODFETs for low-temperature applications

Sustainable Energy Recovery From the Malaysian Coal Bottom Ash and the Effects of Fineness in Improving Concrete Properties

Contact Info

Product

Resources

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Quantifying the Impact of Al Deposition Method on Underlying Al₂O₃/Si Interface Quality

Quantifying the Impact of Al Deposition Method on Underlying Al₂O₃/Si Interface Quality