High quality self-separated GaN crystal grown on a novel nanoporous template by HVPE

Zhang

Crystal Research and Technology

et al. 2020

Self Cite

AlN is a kind of promising semiconductor material for high‐efficiency optoelectronic devices and high‐power high‐frequency electronic devices. In this work, high‐quality c‐plane AlN single crystal with low‐stress is grown on tungsten (W) substrate using a spontaneous nucleation physical vapor transport (PVT) method. Temperature field simulation and theoretical analysis provide a theoretical guide for the AlN crystals growth experiment. The hexagonal appearance c‐plane AlN crystal is obtained with a size up to 3 mm × 3 mm. A large radial temperature gradient and suitable supersaturation lead to a low nucleation density and the growth of AlN crystal with large size, which can be used to regulate nucleation density and size of AlN crystals on W substrate. X‐ray diffraction (XRD), Raman and electron backscatter diffraction (EBSD) results confirm that the crystal is grown along the c‐axis direction with hexagonal wurtzite structure and high crystalline quality. The Raman micro‐mapping results indicate that the grown AlN crystal has small tensile stress, close to free‐stress, and the biaxial stress decreases from interface to surface along with the increasing of crystal thickness. This work will greatly contribute to the research of AlN crystal growth on W substrate.

Section: Resultsmentioning

confidence: 83%

Growth and Stress Analysis of Spontaneous Nucleation c‐Plane Bulk AlN Crystals by a PVT Method

Zhang

Crystal Research and Technology

et al. 2020

Self Cite

“…While, in many cases, the growth substrate is preserved after the chip fabrication, there are many occasions where the semiconductor layers need to be very thin (from nm to µm scale) and transferred to a different substrate by removing the growth substrate [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 , 47 , 48 , 49 , 50 , …”

Section: Introductionmentioning

confidence: 99%

Layer-Scale and Chip-Scale Transfer Techniques for Functional Devices and Systems: A Review

Gong

2021

Nanomaterials

Hetero-integration of functional semiconductor layers and devices has received strong research interest from both academia and industry. While conventional techniques such as pick-and-place and wafer bonding can partially address this challenge, a variety of new layer transfer and chip-scale transfer technologies have been developed. In this review, we summarize such transfer techniques for heterogeneous integration of ultrathin semiconductor layers or chips to a receiving substrate for many applications, such as microdisplays and flexible electronics. We showed that a wide range of materials, devices, and systems with expanded functionalities and improved performance can be demonstrated by using these technologies. Finally, we give a detailed analysis of the advantages and disadvantages of these techniques, and discuss the future research directions of layer transfer and chip transfer techniques.

“…Nanostructures are usually prepared using bottom–up [ 11 , 12 , 13 ] or top–down [ 14 ] approaches. Well-aligned GaN and InGaN nanostructures have been obtained by metal–organic chemical vapor deposition (MOCVD) [ 15 , 16 , 17 ], molecular beam epitaxy growth (MBE) [ 18 ], the vapor–liquid–solid (VLS) mechanism [ 19 ], laser-assisted catalytic growth (LCG) [ 20 ], and the ion-etching reaction [ 21 , 22 ].…”

Section: Introductionmentioning

confidence: 99%

In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching

Soopy

Tang

et al. 2021

Nanomaterials

This review summarizes the recent research on nitride nanostructures and their applications. We cover recent advances in the synthesis and growth of porous structures and low-dimensional nitride nanostructures via metal-assisted photochemical etching and molecular beam epitaxy. The growth of nitride materials on various substrates, which improves their crystal quality, doping efficiency, and flexibility of tuning performance, is discussed in detail. Furthermore, the recent development of In(Ga)N nanostructure applications (light-emitting diodes, lasers, and gas sensors) is presented. Finally, the challenges and directions in this field are addressed.