High Quality SiC Crystals Grown by the Physical Vapor Transport Method with a New Crucible Design

Ku, Kap Ryeol; Kim, Jung Kyu; Seo, Jung Doo; Lee, Ju Young; Kyun, Myung Ok; Lee, Won Jae; Lee, Geun Hyoung; Kim, Il Soo; Shin, Byoungchul

doi:10.4028/www.scientific.net/msf.527-529.83

Cited by 4 publications

(1 citation statement)

References 7 publications

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“…The ideal tapering angle of the cone shaped graphite seed platform is reported to be 30-50° [110]. In recent years, the establishment of a temperature field that favors PVT growth without contact to side walls has been studied by a number of laboratories [111][112][113][114][115].…”

Section: Temperature Fieldmentioning

confidence: 99%

Review of SiC crystal growth technology

Wellmann

2018

Semicond. Sci. Technol.

105

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The review article describes the interplay of fundamental research and advanced processes that have made SiC a unique semiconductor material for power electronic devices. Related to the outstanding physical properties of SiC, the preparation of this material is quite challenging. Processing is carried out at elevated temperatures that require special emphasis on the design of the growth machine and the applied construction materials. Growth inside a closed growth chamber demands the usage of advanced sensors and sophisticated computer simulation of the growth process. The application of advanced 2D and 3D in situ x-ray visualization techniques enables the visualization of the growth process. Reduction of the density of structural defects, a prerequisite for the technical application in power electronic devices, based on fundamental research and understanding of the crystallographic as well as the electronic properties of SiC beyond the knowledge base of standard semiconductor materials.

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Section: Temperature Fieldmentioning

confidence: 99%

Review of SiC crystal growth technology

Wellmann

2018

Semicond. Sci. Technol.

105

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Hydrogen Effect on SiC Single Crystal Prepared by the Physical Vapor Transport Method

Kim

Seo

et al. 2007

MSF

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We investigated the effects of hydrogen addition to the growth process of SiC single crystal using sublimation physical vapor transport (PVT) techniques. Hydrogen was periodically added to an inert gas for the growth ambient during the SiC bulk growth. Grown 2”-SiC single crystals were proven to be the polytype of 6H-SiC and carrier concentration levels of about 1017/cm3 was determined from Hall measurements. As compared to the characteristics of SiC crystal grown without using hydrogen addition, the SiC crystal grown with periodically modulated hydrogen addition definitely exhibited lower carrier concentration and lower micropipe density as well as reduced growth rate.

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An Inserted Epitaxial Layer for SiC Single Crystal Growth by the Physical Vapor Transport Method

Seo

Kim

et al. 2007

MSF

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SiC single crystal ingots were prepared onto different seed material using sublimation PVT techniques and then their crystal quality was systematically compared. In this study, the conventional SiC seed material and the new SiC seed material with an inserted SiC epitaxial layer on a seed surface were used as a seed for SiC bulk growth. The inserted epitaxial layer was grown by a sublimation epitaxy method called the CST with a low growth rate of 2μm/h. N-type 2”-SiC single crystals exhibiting the polytype of 6H-SiC were successfully fabricated and carrier concentration levels of below 1017/cm3 were determined from the absorption spectrum and Hall measurements. The slightly higher growth rate and carrier concentration were obtained in SiC single crystal ingot grown on new SiC seed materials with the inserted epitaxial layer on the seed surface, maintaining the high quality.

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High Quality SiC Crystals Grown by the Physical Vapor Transport Method with a New Crucible Design

Cited by 4 publications

References 7 publications

Review of SiC crystal growth technology

Review of SiC crystal growth technology

Hydrogen Effect on SiC Single Crystal Prepared by the Physical Vapor Transport Method

An Inserted Epitaxial Layer for SiC Single Crystal Growth by the Physical Vapor Transport Method

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