2011
DOI: 10.1007/s10853-011-6036-0
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High-quality spin-on glass-based oxide as a matrix for embedding HfO2 nanoparticles for metal-oxide-semiconductor capacitors

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Cited by 15 publications
(14 citation statements)
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“…It can play a role in the continuous down-scaling of integrated circuits since new insulating materials with a high dielectric constant are being researched to replace SiO2 as a gate dielectric (Wilk et al 2001;Dahal and Chikan 2012;Molina et al 2012a;Molina et al 2012b;Rinkio et al 2009). HfO2 thin layers are highly promising as high-κ dielectric layers in CMOS technology and as dielectric capacitor layers in DRAMs (Wilk et al 2001).…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…It can play a role in the continuous down-scaling of integrated circuits since new insulating materials with a high dielectric constant are being researched to replace SiO2 as a gate dielectric (Wilk et al 2001;Dahal and Chikan 2012;Molina et al 2012a;Molina et al 2012b;Rinkio et al 2009). HfO2 thin layers are highly promising as high-κ dielectric layers in CMOS technology and as dielectric capacitor layers in DRAMs (Wilk et al 2001).…”
Section: Introductionmentioning
confidence: 99%
“…Amorphous nanoparticles of HfO2 were used for EUV patterning to develop inorganic photoresists (Trikeriotis et al 2012). Hafnia nanoparticles were embedded in a glass matrix to increase the dielectric constant (Molina et al 2012a;Molina et al 2012b). Recently, hafnium based nanoparticles were grown in situ in GdBa2Cu3O7-δ coated conductors to improve the critical current of the superconductor (Tobita et al 2012).…”
Section: Introductionmentioning
confidence: 99%
“…These two Hf-O chemical bonds are detected at 752 cm -1 and 515 cm -1 and whose peak intensity increase directly with the concentration of np-HfO 2 [3][4]. [3][4]. Figure 3 shows the full I-V characteristics for a MOHOS structure (having a SiOx= 2nm) and we notice that a wide conduction window is formed after reaching the breakdown voltage of Vbkd ~3V.…”
Section: Methodsmentioning
confidence: 99%
“…We notice the characteristic absorption peaks for some common Si-O and Hf-O chemical bonds, thus confirming proper inclusion of the np-HfO 2 in the CTL. These two Hf-O chemical bonds are detected at 752 cm -1 and 515 cm -1 and whose peak intensity increase directly with the concentration of np-HfO 2 [3][4]. [3][4].…”
Section: Methodsmentioning
confidence: 99%
“…1,2 Furthermore, the mixed metal oxide Hf1-XZrXO2 is a ferroelectric material of interest. 3,4 Nanocrystals of the group 4 oxides have many applications such as superconducting nanocomposites, 5,6 optical nanocomposites, [7][8][9] dentistry, 10 (photo)catalysis, [11][12][13] and X-ray computed tomography contrast agents. 14 Colloidal stability and control over nanocrystal size is a prerequisite for many of these technologies.…”
Section: Introductionmentioning
confidence: 99%