High-quality structures with InAs/Al0.9Ga0.1As QDs produced by droplet epitaxy

Lyamkina, Anna A.; Abramkin, D. S.; Дмитриев, Д. В.; Gulyaev, D. V.; Gutakovsky, A.K.; Moshchenko, S. P.; Шамирзаев, Т. С.; Toropov, A. I.; Журавлев, К. С.

doi:10.1016/j.jcrysgro.2011.10.011

Cited by 2 publications

(4 citation statements)

References 10 publications

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“…Figure 1(b) and (c) demonstrate that the Al 0.5 Ga 0.5 As and AlAs surfaces on which In droplets are formed in our experiments are very smooth, which means that In droplet characteristics are not influenced by the surface roughness. The sharp RHEED pattern recorded before and directly during the droplet epitaxial growth also indicates an atomically smooth surface [16,23]. Droplets on all three surfaces are spread unevenly over the surface and have a nearly semispherical shape.…”

Section: Resultsmentioning

confidence: 80%

“…Perfect InAs/AlGaAs QD structures with smooth heterointerface and low concentration of nonradiative recombination centers were obtained using a method of droplet epitaxy [16]. Unlike the Stranski-Krastanov growth method, droplet epitaxy allows elimination of the wetting layer [17][18][19][20], thus providing better quality of nanostructures and devices based on them [18,21].…”

Section: Introductionmentioning

confidence: 99%

“…Despite the great importance, this issue is still poorly addressed for the In/AlGaAs system. Separate studies of the droplet epitaxial In/AlGaAs growth are presented in the literature [16,22,23], but there is a lack of comparative studies of the growth on surfaces at various Al contents with all other growth conditions being equal. Nevertheless, a study of the Al content influence on In droplet parameters is important in the sense that droplet epitaxy has a number of advantages, such as high quality of structures and good optical characteristics of light-emitting devices [16,[24][25][26][27][28], low QD density when creating single-photon emitters [29][30][31][32], possibility to avoid the formation of a wetting layer [18,[32][33][34][35] which increases the dark current of photodetectors and generally degrades optical characteristics of devices [36,37], etc.…”

Section: Introductionmentioning

confidence: 99%

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Anomalous behavior of In adatoms during droplet epitaxy on the AlGaAs surfaces

Balakirev

Солодовник²,

Eremenko³

et al. 2020

Nanotechnology

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Semiconductor quantum dots (QDs) in the InAs/AlGaAs system are of great importance due to their promising optoelectronic and nanophotonic applications. However, control over emission wavelength governed by Al content in the matrix is still limited because of an influence of surface Al content on QD size and density. In this paper, we study the growth of In nanostructures by droplet epitaxy on various AlGaAs surfaces. We demonstrate that an increase in the Al content leads to a decrease in the droplet density and an increase in their size, which contradicts the Stranski-Krastanov QD growth. Using a hybrid analytical-Monte Carlo model, we explain this phenomenon by the fact that In adatoms acquire higher mobility on a first indium monolayer which is bound to surface Al atoms. This assumption is confirmed by the fact that a temperature decrease does not lead to a great increase in the critical thickness of droplet formation on the Al-containing surfaces whereas it changes considerably on the GaAs surface. Furthermore, the Al content influence on the formation of In droplets is much less significant than on the growth of InAs QDs by the Stranski-Krastanov mode. This gives an opportunity to use droplet epitaxy to control the matrix bandgap without considerable influence on the QD characteristics.

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Section: Resultsmentioning

confidence: 80%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Anomalous behavior of In adatoms during droplet epitaxy on the AlGaAs surfaces

Balakirev

Солодовник²,

Eremenko³

et al. 2020

Nanotechnology

View full text Add to dashboard Cite

show abstract

“…On the one hand, this model of a sliced sphere assumes a sharp edge at the lower surface that might cause certain inaccuracies in simulation. 28 On the other hand, the experiments on droplet epitaxy reveal a high quality lower heterointerface 29 implying the presence of this edge in experimental structures. Such a spike could be an important feature of droplets providing an extra enhancement of electrical field.…”

Section: ■ Methods Of Simulationmentioning

confidence: 99%

Numerical Investigation of Surface Plasmon Resonance in Lens-Shaped Self-Assembled Nanodroplets of Group III Metals

Lyamkina

Moshchenko

2013

J. Phys. Chem. C

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Metal droplets are prominent candidates for plasmonic antennas for semiconductor quantum dots (QDs) due to compatibility with molecular beam epitaxy (MBE). They can be produced in a self-assembly process directly in the MBE chamber on substrates with buried QDs, forming vertically aligned QD-droplet pairs and thus opening the way for the synthesis of novel hybrid metal−semiconductor structures. In this paper, we have numerically studied the surface plasmon resonance in lens-shaped droplets consisted of group III metals focusing on the influence of the droplet material and tuning of the resonance position. The discrete dipole approximation method was used for simulations, and typical experimental parameters were considered. Indium was demonstrated to be efficient for plasmonic applications in the near-infrared region. The resonance position redshifts linearly with increasing droplet size and can be tuned in a wide range to match InAs/GaAs QDs emission. Large droplets support multipolar modes with specific polarization and incidence angle dependences that can be used for multichannel selective plasmonic nanoantennas. Nanodroplets of group III metals present efficient and highly tunable plasmonic structures that along with self-assemble formation make them attractive for solid-state nanophonotics.

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High-quality structures with InAs/Al0.9Ga0.1As QDs produced by droplet epitaxy

Cited by 2 publications

References 10 publications

Anomalous behavior of In adatoms during droplet epitaxy on the AlGaAs surfaces

Anomalous behavior of In adatoms during droplet epitaxy on the AlGaAs surfaces

Numerical Investigation of Surface Plasmon Resonance in Lens-Shaped Self-Assembled Nanodroplets of Group III Metals

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