High‐quality ternary relaxor ferroelectric thin films on Si substrates by pulsed laser deposition method

Abstract

In this work, ternary relaxor ferroelectric thin films 0.5mol% Mn‐doped 0.36Pb(In1/2Nb1/2)O3‐0.36Pb(Mg1/3Nb2/3)O3‐0.28PbTiO3 (Mn‐PIMNT) with high Curie point were grown on the Pt/Ti/SiO2/Si substrate with the addition of La0.6Sr0.4CoO3 (LSCO) as a buffer layer. The phase and domain structure, nanoscale piezoelectric response, and macroscopic ferroelectric, dielectric, pyroelectric properties of Mn‐PIMNT thin films were studied. Both the crystalline quality and the crystallographic orientation exhibited strong temperature dependence within the substrate temperature of 450–580°C. Under the optimized temperature of 530°C, the Mn‐PIMNT thin film exhibited excellent global electrical properties with remnant polarization Pr∼35.6 μC/cm2, coercive field Ec∼5.1 kV/mm, dielectric constant εr${\varepsilon _r}$∼3360, and relatively low dielectric loss tanδ∼0.03. It was further found that the pyroelectric coefficient of the Si‐substrated Mn‐PIMNT thin film reached 6.7 × 10−4 C/m2·K. The optimized ferroelectric thin films Mn‐PIMNT on Si substrate with excellent temperature stability show great potential in integrated microelectromechanical systems.