High quantum efficiency AlGaN solar-blind <i>p-i-n</i> photodiodes

McClintock, Ryan P; Yasan, A.; Mayes, K.; Shiell, D.; Darvish, S. R.; Kung, Patrick; Razeghi, Manijeh

doi:10.1063/1.1650550

Cited by 125 publications

(63 citation statements)

References 11 publications

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“…3 In addition, we used pulsed laser deposition to prepare a cubic-phase Mg 0.82 Zn 0.18 O alloy, which exhibited a bandgap energy of 6.7 eV. 5 The ability to perform bandgap modulation makes 4 In this study, we evaluated the effect of deposition temperature on the optical properties of magnesium zinc oxide thin films prepared using pulsed laser deposition. Determining the relationship between the growth temperature and the optical properties for magnesium zinc oxide thin films will facilitate the development of novel magnesium zinc oxide-based optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

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Growth-Temperature-Controlled Optical Properties of Textured Mg x Zn1−x O Thin Films

Wei

Jin

Narayan

2008

Journal of Elec Materi

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Pulsed laser deposition was used to grow magnesium zinc oxide thin films on amorphous fused silica substrates at several temperatures between room temperature and 750°C. In this study, the effect of growth temperature on the optical properties of textured Mg x Zn 1-x O thin films was examined. The optical properties of the films were measured using absorption and photoluminescence spectrometry. Absorption spectra revealed that the bandgap values of textured Mg x Zn 1-x O thin films were enhanced in films grown at higher temperatures. The absorption spectra near the absorption edge were fitted using the Urbach equation in order to investigate the effects of growth temperature on exponential band tail and bandgap. The photoluminescence spectra were measured for magnesium zinc oxide thin films deposited at 250°C, 350°C, 450°C, 550°C, and 650°C. The film grown at 350°C provided the highest excitonic peak intensity. On the other hand, the film grown at 250°C exhibited the lowest excitonic peak intensity. The excitonic peak intensity was considerably reduced in magnesium zinc oxide thin films grown at temperatures greater than 350°C. The ability to perform substrate-temperature-dependent bandgap engineering of Mg x Zn 1-x O will enable use of this material in nextgeneration optical and optoelectronic devices.

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Section: Introductionmentioning

confidence: 99%

“…[1][2][3][4] Zinc oxide (bandgap 3.39 eV) may be alloyed with magnesium oxide (bandgap 7.8 eV) in order to form magnesium zinc oxide alloys. The bandgap of this material may be engineered by controlling the magnesium concentration.…”

Section: Introductionmentioning

confidence: 99%

Growth-Temperature-Controlled Optical Properties of Textured Mg x Zn1−x O Thin Films

Wei

Jin

Narayan

2008

Journal of Elec Materi

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“…It has great potential applications such as in high temperature and high frequency electronic device [1], deep ultraviolet light emitting device and photodetectors at wavelengths are below 280 nm, which have many special applications in water purification, military affairs, and biochemical identification [2,3]. Nevertheless, it is very difficult to obtain a high quality crystalline AlN epilayer grown on sapphire substrate by MOCVD due to the low surface migration of Al atoms and parasitic reactions between trimethylaluminum (TMA) and ammonia (NH 3 ) [4].…”

Section: Introductionmentioning

confidence: 99%

Improvement of crystal quality of AlN grown on sapphire substrate by MOCVD

Lai¹,

Chang

Yuan

et al. 2010

Cryst. Res. Technol.

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The crystalline quality of aluminum nitride (AlN) epilayers grown on sapphire substrates by MOCVD was improved by increasing hydrogen flow rate during the high temperature growth process. The AlN epilayer exhibited a root mean square (rms) of roughness was 1.944 nm from the 2×2 µm 2 size atomic force microscopy (AFM) images. Full widths at half maximum (FWHMs) of (002) and (102) rocking curves of triple-axis high resolution X-ray diffraction (HRXRD) measurements were as narrow as 28.8 arc sec and 868 arc sec, respectively. The optical transmittance spectra showed a sharp absorption edge at a wavelength of 200 nm and strong Fabry-Perot (FP) oscillations. It is proposed that the improvement in crystalline quality is due to the surface in the low-temperature aluminum nitride (LT-AlN) buffer layer is promoted to be stable Al-polarity by the conditions of increasing hydrogen flow rate and ramping up the growth temperature. Addtionally, the parasitic reactions are effectively suppressed by increasing the hydrogen flow rate during the growth process of high temperature.

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“…Al-rich AlGaN alloys are currently attracting much attention since they are particularly suited for the realization of deep ultraviolet (UV) optoelectronic devices, such as light emitting diodes, laser diodes, and solar-blind photodetectors [1][2][3]. To obtain high performance from these devices, highly conductive n-type and p-type AlGaN alloys with high Al fraction are indispensable.…”

Section: Introductionmentioning

confidence: 99%

Mg‐doped AlGaN grown on an AlN/sapphire template by metalorganic chemical vapour deposition

Strupiński

Bütün

et al. 2006

Physica Status Solidi (a)

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The growth of high-performance Mg-doped p-type Al x Ga 1-x N (x = 0.35) layers using low-pressure metalorganic chemical vapour deposition on an AlN/sapphire template is reported. The influence of growth conditions on the p-type conductivity of the Al x Ga 1-x N (x = 0.35) alloy was investigated. It was found that the p-type resistivity of the AlGaN alloy demonstrates a marked dependence on the Mg concentration, V/III ratio and group III element flow rate. A minimum p-type resistivity of 3.5 Ω cm for Al x Ga 1-x N (x = 0.35) epilayers was achieved. A Ni/Au (10 nm/100 nm) ohmic contact was also fabricated and a specific contact resistivity of 8.1 × 10 -2 Ω cm 2 was measured.

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High quantum efficiency AlGaN solar-blind p-i-n photodiodes

Cited by 125 publications

References 11 publications

Growth-Temperature-Controlled Optical Properties of Textured Mg x Zn1−x O Thin Films

Growth-Temperature-Controlled Optical Properties of Textured Mg x Zn1−x O Thin Films

Improvement of crystal quality of AlN grown on sapphire substrate by MOCVD

Mg‐doped AlGaN grown on an AlN/sapphire template by metalorganic chemical vapour deposition

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