High-rate deposition of nanocrystalline silicon using the expanding thermal plasma technique

Kessels, Wmm Erwin; Houston, IJ; Nadir, K Kerim; Sanden, van de Mcm Richard

doi:10.1016/j.jnoncrysol.2006.01.044

Cited by 9 publications

(3 citation statements)

References 14 publications

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“…Previous work, however, has shown that the μc-Si:H material quality is poor [12][13][14][15]. In general, device-grade microcrystalline (and amorphous) silicon material is found close to the so-called amorphous-tomicrocrystalline transition regime, i.e.…”

Section: Introductionmentioning

confidence: 94%

Remote plasma deposition of microcrystalline silicon thin-films: Film structure and the role of atomic hydrogen

Bronneberg

Sanden

Creatore

2012

Journal of Non-Crystalline Solids

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Section: Introductionmentioning

confidence: 94%

Remote plasma deposition of microcrystalline silicon thin-films: Film structure and the role of atomic hydrogen

Bronneberg

Sanden

Creatore

2012

Journal of Non-Crystalline Solids

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“…There are many different methods of producing nc-Si, such as radio frequency plasma enhanced chemical vapor deposition (CVD) [3], inductively coupled plasma CVD [4], hot wire CVD [5], expanding thermal plasma deposition [6], and others. However, there have been only a few studies where nc-Si was prepared from a-Si:H by solid-phase crystallization (SPC) [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Solid-phase crystallization of high growth rate amorphous silicon films deposited by gas-jet electron beam plasma CVD method

et al. 2014

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Solid phase crystallization of amorphous silicon films (a-Si:H) deposited by gas-jet electron beam plasma chemical vapor deposition method and annealed at 700°C in vacuum has been investigated. This method provides high deposition rates (up to 2.3 nm/s) of a-Si:H thin films in a standard vacuum chamber. The effects of varying the substrate temperature from 190 to 415°C on the structural and optical properties of the as-deposited amorphous films and postannealed nanocrystalline films have been investigated. The crystallite size was determined by X-ray diffraction (about 5-8 nm) and agrees with that obtained from Raman scattering. The estimated degree of crystallinity was 45%-59%. Optical transmission spectra were recorded to investigate the optical properties and thickness of the silicon thin films. The refractive index and optical band gap data was obtained for both as-deposited amorphous and post-annealed nanocrystalline silicon. The behavior of the refractive index of nanocrystalline silicon depending on the substrate temperature is correlated with the crystalline volume fraction. a-Si:H films obtained at low temperatures have larger crystallite size and better crystallinity after annealing.Résumé : Nous étudions la cristallisation en phase solide de films de silicium amorphe (a-Si:H) fabriqués par dépôt chimique en phase vapeur avec faisceau de plasma et jet électronique, avant un recuit à 700°C, le tout dans le vide. Cette méthode donne un fort taux de déposition (jusqu'à 2.3 nm/s) de a-Si:H dans une chambre à vide standard. Nous étudions l'effet de varier la température du substrat de 190 à 415°C sur les propriétés structurelles et optiques des films tels que déposés avant recuit et des films nano-cristallisés après recuit. Nous déterminons la grosseur des cristallites par XRD (environ 5-8 nm) et elle correspond aux résultats par diffusion Raman. La cristallinité varie entre 45 % et 59 %. Nous enregistrons les spectres de transmission optique pour étudier les propriétés optiques et l'épaisseur des films de Si. Nous obtenons l'indice de réfraction et les données sur la bande interdite optique des films tels que déposés et après recuit. La dépendance sur la température du substrat de l'indice de réfraction est corrélée avec la fraction cristalline en volume. Les films de a-Si:H obtenus à basse température ont des cristallites plus grosses et une meilleure cristallinité après recuit. [Traduit par la Rédaction]

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“…[2][3][4][5][6] The ETP has proven to be a viable deposition technique for amorphous silicon (a-Si:H), silicon nitride, and silicon dioxide at very high growth rates (2-20 nm/s). [7][8][9] In addition, the setup is compatible with large-area deposition: for example, OTB-Solar/Roth&Rau (member of the Meyer Burger group) applies multiple ETP sources to achieve a uniform deposition over an area as large as $0.3 m 2 .…”

Section: Introductionmentioning

confidence: 99%

Ion-induced effects on grain boundaries and a-Si:H tissue quality in microcrystalline silicon films

Bronneberg

Cankoy

Sanden

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Microcrystalline silicon films have been deposited by means of the remote expanding thermal plasma. The effect of ion bombardment on the microcrystalline silicon film properties has been investigated by applying an RF bias to the deposition substrate. The application of the RF substrate bias resulted in the formation of an additional plasma in front of the substrate holder. Neither the SiH 4 depletion nor the growth flux was significantly enhanced upon substrate biasing, which suggests that (the composition of) the growth precursor flux is unaffected and that the ion-film interaction mechanisms were responsible for the observed material changes. Moderate bias conditions (i.e., dc bias voltages up to $70 V) led to an improved grain boundary passivation and densification of the amorphous silicon tissue, as concluded from the analysis of the infrared Si-H x stretching modes. These improvements have been ascribed to ion-induced Si surface atom displacement, which enhances the surface diffusion length of the growth precursors. More-energetic ion bombardment (i.e., under applied dc bias voltages of $60 V and higher) resulted in enhanced (di)vacancy incorporation via ion-induced Si bulk atom displacement. The film crystallinity was found not to be affected by the ion bombardment, although a reduced crystallite size was observed under ion bombardment conditions where Si bulk displacement had been sufficiently activated. The extent of the ion-film interaction mechanism has been enhanced...

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High-rate deposition of nanocrystalline silicon using the expanding thermal plasma technique

Cited by 9 publications

References 14 publications

Remote plasma deposition of microcrystalline silicon thin-films: Film structure and the role of atomic hydrogen

Remote plasma deposition of microcrystalline silicon thin-films: Film structure and the role of atomic hydrogen

Solid-phase crystallization of high growth rate amorphous silicon films deposited by gas-jet electron beam plasma CVD method

Ion-induced effects on grain boundaries and a-Si:H tissue quality in microcrystalline silicon films

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