2013
DOI: 10.1088/0953-2048/26/4/045020
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High-rate deposition of YBa2Cu3O7−δhigh-temperature superconducting films by IR-laser-assisted chemical vapor deposition

Abstract: We applied an infrared-(IR-) laser-assisted chemical vapor deposition technique to YBa 2 Cu 3 O 7−δ (YBCO) film fabrication in order to enhance the deposition rate to one suitable for commercial applications. IR-laser illumination during deposition effectively suppressed outgrowth of a-axis oriented grains, which strongly diminish the film's current-carrying capacity. As a result, high-performance YBCO films with critical current densities of greater than 1 × 10 6 A cm −2 were successfully obtained at high dep… Show more

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Cited by 8 publications
(3 citation statements)
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“…As the current was increased, the voltage initially remained zero and then started to increase when the current reached 60 A, which indicates a high J c of 2.7 MA cm −2 . The J c value obtained in this study was greater than those of YBCO films (0.5-2.6 MA cm −2 ) prepared on multilayer-coated Hastelloy C276 tape by MOCVD [16,17] and laser-assisted CVD [8,9].…”
Section: Resultscontrasting
confidence: 64%
See 1 more Smart Citation
“…As the current was increased, the voltage initially remained zero and then started to increase when the current reached 60 A, which indicates a high J c of 2.7 MA cm −2 . The J c value obtained in this study was greater than those of YBCO films (0.5-2.6 MA cm −2 ) prepared on multilayer-coated Hastelloy C276 tape by MOCVD [16,17] and laser-assisted CVD [8,9].…”
Section: Resultscontrasting
confidence: 64%
“…Miyata et al recently reported the high-rate preparation of YBCO superconducting films using laser CVD [9]. They also studied the mechanism of the growth mode in the laser CVD process taking into account the relationship between the deposition rate and the precursor delivery rate; however, the microstructure of high-J c film prepared by laser CVD has not been elucidated.…”
Section: Introductionmentioning
confidence: 99%
“…Consequently, the control of the crystal growth orientation is actually a matter of the regulation of the thermodynamics and kinetics factors, which means that a-axis-oriented lms can be grown at a lower energy and c-axisoriented ones need higher migration energy for crystallization. 29 Meanwhile, the laser with excessive power density would not only cause the violent collisions of the gas molecules, but also the damage of the surface condition, such as steps, etch pits and micro-cracks, resulting in the a-axis-oriented grains. 30,31 Fig .…”
Section: Methodsmentioning
confidence: 99%