High-rate growth of gallium oxide films by plasma-enhanced thermal oxidation for solar-blind photodetectors

Su, Tong; Xiao, Bohan; Ai, Zikang; Bao, Lingjie; Chen, Wencheng; Shen, Yuheng; Cheng, Qijin; Ostrikov, Kostya

doi:10.1016/j.apsusc.2023.157162

Cited by 4 publications

(1 citation statement)

References 62 publications

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“…Gallium, as a rare transition element, is found primarily as oxides in ores [1]. Its exceptional magnetic and thermal conductivity render gallium compounds extensively valuable for various industrial materials, including semiconductor film, multijunction solar cells, and catalysts for molecular transformation [2][3][4][5][6]. On the other hand, liquid gallium has attracted extensive attention because of its specific antibacterial activity and biocompatibility, finding wide application in treating hypercalcemia and bone metabolism [7,8].…”

Section: Introductionmentioning

confidence: 99%

A comparative study of two thienopyrimidine Schiff base probes for sequential monitoring of Ga³⁺ and Pd²⁺

Shi,

Li,

Kang

et al. 2024

Luminescence

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Two Schiff base probes (S1 and S2) were prepared and synthesized by incorporating thienopyrimidine into salicylaldehyde or 3‐ethoxysalicylaldehyde individually, with the aim of detecting Ga3+ and Pd2+ sequentially. Upon chelation with Ga3+, S1 and S2 exhibited fluorescence enhancement in DMSO/H2O buffer. Both S1–Ga3+ and S2–Ga3+ were quenched by Pd2+. The limit of detection for S1 in response to Ga3+ and Pd2+ was 2.86 × 10−7 and 4.4 × 10−9 M, respectively. For S2, the limit of detection for Ga3+ and Pd2+ was 4.15 × 10−8 and 3.0 × 10−9 M, respectively. Furthermore, the complexation ratios of both S1 and S2 with Ga3+ and Pd2+ were determined to be 1:2 through Job's plots, ESI‐MS analysis, and theoretical calculations. Two molecular logic gates were constructed, leveraging the response behaviors of S1 and S2. Moreover, the potential utility of S1 and S2 for monitoring Ga3+ and Pd2+ in domestic water was verified.

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Section: Introductionmentioning

confidence: 99%

A comparative study of two thienopyrimidine Schiff base probes for sequential monitoring of Ga³⁺ and Pd²⁺

Shi,

Li,

Kang

et al. 2024

Luminescence

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Plasma surface treatment of amorphous Ga2O3 thin films for solar-blind ultraviolet photodetectors

Xiao,

Liu,

et al. 2024

Applied Surface Science

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Excellent Wavelength Selectivity of p-AlGaN/n-Ga₂O₃ Solar-Blind UVC PD

He,

Sun,

et al. 2024

ACS Appl. Mater. Interfaces

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Due to the advantages of ultrawide bandgap, chemical stability, self-powered, and low cost, gallium oxide (Ga 2 O 3 ) based photodetectors (PDs) are considered as one of the most promising solar-blind ultraviolet PDs, having garnered significant attention in fields such as missile warning and flame arc detection. High selective ratios and excellent responsivity are important to reduce the false alarm rate in solar-blind detection. However, due to the lack of p-type Ga 2 O 3 , existing Ga 2 O 3 -based PN PDs utilized heterostructures with narrower bandgap p-type semiconductors (e.g., p-GaN, p-SiC, etc.), inducing poor selective ratios with visible light and ultraviolet-A/B (UVA/B). Therefore, a high Al content AlGaN was used in this study to form a p-AlGaN/ n-Ga 2 O 3 solar-blind ultraviolet-C (UVC) PD. Since the bandgap of p-AlGaN aligned with the UVC region, the device exhibited exceptionally high selective ratios with R 247nm /R 360nm = 3.71 × 10 5 and R 247nm /R 300nm = 1.47 × 10 5 at 0 V, which surpassed the reported Ga 2 O 3 -based PN PDs. The formation of the type-II heterojunction facilitated the effective separation and transport of photogenerated carriers, resulting in high responsivity (0.36 A/W) under zero bias. Overall, the high selective ratios and high responsivity of the p-AlGaN/n-Ga 2 O 3 PD in this paper provided a reliable pathway for self-powered solar-blind PDs with a low false alarm rate.

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High-rate growth of gallium oxide films by plasma-enhanced thermal oxidation for solar-blind photodetectors

Cited by 4 publications

References 62 publications

A comparative study of two thienopyrimidine Schiff base probes for sequential monitoring of Ga³⁺ and Pd²⁺

A comparative study of two thienopyrimidine Schiff base probes for sequential monitoring of Ga³⁺ and Pd²⁺

Plasma surface treatment of amorphous Ga2O3 thin films for solar-blind ultraviolet photodetectors

Excellent Wavelength Selectivity of p-AlGaN/n-Ga₂O₃ Solar-Blind UVC PD

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High-rate growth of gallium oxide films by plasma-enhanced thermal oxidation for solar-blind photodetectors

Cited by 4 publications

References 62 publications

A comparative study of two thienopyrimidine Schiff base probes for sequential monitoring of Ga3+ and Pd2+

A comparative study of two thienopyrimidine Schiff base probes for sequential monitoring of Ga3+ and Pd2+

Plasma surface treatment of amorphous Ga2O3 thin films for solar-blind ultraviolet photodetectors

Excellent Wavelength Selectivity of p-AlGaN/n-Ga2O3 Solar-Blind UVC PD

Contact Info

Product

Resources

About

A comparative study of two thienopyrimidine Schiff base probes for sequential monitoring of Ga³⁺ and Pd²⁺

A comparative study of two thienopyrimidine Schiff base probes for sequential monitoring of Ga³⁺ and Pd²⁺

Excellent Wavelength Selectivity of p-AlGaN/n-Ga₂O₃ Solar-Blind UVC PD