“…To further determine the contribution of diffusion‐controlled behavior to the overall process, the following equation was employed:
where k 1 and k 2 are the constants, and k 1 ( V ) ·
and k 2 ( V ) ·
1/2 represent the contribution of capacitive and diffusion control processes, respectively. [
70 ] Figure shows that approximately 25% of the overall capacity is attributed to the capacitive process at a scan rate of 0.6 mV s −1 . The contribution of pseudocapacitance to the overall capacities of SnS 2 @SPAN is plotted in Figure .…”