2003
DOI: 10.2493/jjspe.69.1444
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High-Rate Synthesis of Diamond by Plasma CVD under Higher Pressure than Atmospheric Pressure

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“…At 80 kPa, a high growth rate of 192 mm/h is obtained in sample (f). This value is on the same order as that in previous studies, [18][19][20] in which growth rates of 100 to 160 mm/h were obtained by microwave plasma CVD. The surface hardness of sample (f) was measured with a nanoindentor (Hysitron Triboscope) attached to an atomic force microscope (AFM; Shimadzu SPM9500J2), and hardnesses of 15 to 80 GPa were determined.…”
Section: Growth Ratesupporting
confidence: 84%
“…At 80 kPa, a high growth rate of 192 mm/h is obtained in sample (f). This value is on the same order as that in previous studies, [18][19][20] in which growth rates of 100 to 160 mm/h were obtained by microwave plasma CVD. The surface hardness of sample (f) was measured with a nanoindentor (Hysitron Triboscope) attached to an atomic force microscope (AFM; Shimadzu SPM9500J2), and hardnesses of 15 to 80 GPa were determined.…”
Section: Growth Ratesupporting
confidence: 84%