High reflectivity 1.55 μm (Al)GaAsSb/AlAsSb Bragg reflector lattice matched on InP substrates

Abstract

We report the molecular beam epitaxy growth of (Al) GaAsSb/AlAsSb Bragg reflectors around the 1.55 μm wavelength region. Mirrors with 96% reflectivity have been achieved by using ten pairs of quarter wavelength layers. This demonstrates the capability of the (Al) GaAsSb/AlAsSb system to achieve efficient Bragg mirrors lattice matched to InP substrates.

A comparative study of AlGaAsSb/AlAsSb distributed Bragg mirrors on InP

“…Material systems such as InGaAsP/InP [5,6], AlGaInAs/AlInAs [7,8] and AlGaAsSb/AlAsSb [9][10][11][12][13] have been used in light-emitting devices. Among these systems, the antimonide alloys exhibit the highest refractive index contrast [14,15]. The high refractive index contrast of the AlGaAsSb/AlAsSb layers in the Bragg stacks makes it possible to obtain a high reflectivity for a small number of quarterwave layers (20.5 pairs versus 41.5 pairs for the InGaAsP/InP system [10]).…”

“…Studies of the AlGaAsSb/AlAsSb Bragg mirrors on InP founded in the literature emphasize the growth of alloys by molecular beam epitaxy (MBE) [12-14, 16, 18, 19], and the analysis of the optical [12,14,18,19], structural [12,14] and electrical [9,16] properties of Bragg mirrors. More recent studies have also described the VCSELs processing and test based on the Bragg mirrors [8,[20][21][22].…”

Highly reflective AlGaAsSb/InP Bragg reflector at 1.55μm grown by MOVPE

“…Even though GaAsSb grown by metalorganic vapor-phase epitaxy (MOVPE) is applied to e.g. DHBTs and solar cells, thick AlGaAsSb/InP heterostructures like DBRs with quality sufficient to achieve high reflectivities, have been grown only by molecular beam [5]. Owing to the lower costs, MOVPE is today extensively used in the III-V semiconductor industry for large volume production [6] giving the incentive for the fabrication of DBR structures or mm-thick AlGaAsSb/InP heterostructures for different applications.…”

Semiconductor Disk Lasers: Recent Advances in Generation of Yellow-Orange and Mid-IR Radiation

“…First, for conventional InGaAs/GaAs QW material a relatively large content of indium must be used to reduce the bandgap energy to the desired value and the high indium content increases the lattice constant of the material causing buildup of strain in the layer structure. Alternatively, one could also resort to the use of InP-based QWs which work at 1.2 μm-1.6 μm, but unlike with GaAs, the DBR materials lattice matched to InP have very low index contrast [77][78][79][80]. Therefore, the thickness of the Bragg reflector must be increased significantly in order to achieve high reflectance.…”