High reflectivity AlGaN/AlN DBR mirrors grown by MOCVD

Xie, Zili; Zhang, R.; Liu, B.; Ji, XL; Li, L.; Liu, C.X.; Jiang, R. L.; Gong, Haimei; Zhao, Hong; Han, Ping; Shi, Yi; Zheng, You

doi:10.1016/j.jcrysgro.2006.10.216

Cited by 13 publications

(9 citation statements)

References 14 publications

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“…Based on the reflectivity measurements, the shorter peak could also be a polariton mode. At certain wavelengths, both types of mode could be formed, which can be separately activated by passing through different lasing thresholds [18]. This could explain why the sudden narrowing of the peak appears to happen twice while increasing with power in figure 4(a).…”

Section: Resultsmentioning

confidence: 96%

“…Recently, nanoporous GaN (NP-GaN) have been reported as a method to create high reflectance lattice-matched GaN DBRs [8,[15][16][17]. It offers an alternative to other epitaxial GaN-based DBRs that usually require many pairs of alternating layers before achieving desired results such as AlGaN/GaN [18]. In this paper, we will demonstrate high quality InGaN-based microdisk cavities with 3.5 µm diameter, which includes a bottom NP-GaN DBR and a top dielectric DBR.…”

Section: Introductionmentioning

confidence: 99%

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Optical characterisation of InGaN-based microdisk arrays with nanoporous GaN/GaN DBRs

Fletcher

Arriba

Tian

et al. 2022

J. Phys. D: Appl. Phys.

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Optically pumped whispering gallery mode (WGM) lasing has been observed in many freestanding microdisk structures. Dry etching is normally used to fabricate the microdisks, which causes severe sidewall damage, resulting in degradation of lasing performance, especially for ultra-small electrically-injected devices. In this paper, we demonstrate high quality microdisk cavities with 3.5 µm diameter, by combining a selective overgrowth approach and an epitaxial lattice-matched distributed Bragg reflectors (DBR), topped with a highly reflective (>99%) dielectric DBR. InGaN polaritons are foundto occur inthe high-quality microcavities. WGM modes are measured, with the positions in good agreement with finite difference time domain (FDTD) simulations. Furthermore, lasing behaviour is observed with a threshold at 410 µW and a dominate mode at 488 nm.

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Section: Resultsmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

Optical characterisation of InGaN-based microdisk arrays with nanoporous GaN/GaN DBRs

Fletcher

Arriba

Tian

et al. 2022

J. Phys. D: Appl. Phys.

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“…The optically pumped AlGaN vertical-cavity surface-emitting laser had been reported in the deep ultraviolet range. The epitaxial AlN/AlGaN − -distributed Bragg reflector (DBR) structures had been reported for the DUV wavelength range; they had a large lattice mismatch, a small refractive index, different properties, and a long epitaxial growth time. The n + -AlGaN:Si epitaxial layer with a high refractive index can be transformed into the conductive porous AlGaN:Si layer with a low refractive index through an electrochemical (EC) wet etched process.…”

Section: Introductionmentioning

confidence: 99%

Ultraviolet-C AlGaN Resonant-Cavity Light-Emitting Diodes with Thermal Stability Pipe-AlGaN-Distributed Bragg Reflectors

Chen

Wang

et al. 2023

ACS Omega

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Ultraviolet-C AlGaN resonant-cavity light-emitting diodes with top and bottom pipe-AlGaN-distributed Bragg reflectors (DBRs) have been demonstrated. For the top/bottom DBR structures, 20 pairs of n+-AlGaN:Si/n-AlGaN:Si stack structures were transformed into the pipe-AlGaN:Si/n-AlGaN:Si DBRs through a doping-selective electrochemical wet etching process. The reflectivity of the pipe-AlGaN DBR structure was measured as 90% at 276.7 nm with a 20.9 nm flat stopband width. The anisotropic optical properties of the pipe-AlGaN DBR structure had been analyzed through the polarization-dependent reflectance spectra. For temperature-dependent reflectance spectra, the central wavelengths were slightly redshifted from 275 nm (100 K) to 281 nm (600 K) due to thermal expansion, refractive index increase, and partial strain release phenomena in the pipe-DBR structure. High photoluminescence emission intensity and line-width reducing phenomena were observed at 10 K in the UVC-LED with the resonant-cavity structure, which has potential for high-efficiency UV-C light source applications.

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“…Nevertheless, in most reports of AlN-GaN-based (AlN/GaN, AlGaN/GaN or AlGaN/AlN) DBRs, the DBRs were deposited on sapphire substrates. [11][12][13][14][15][16][17][18] There are very few reports of DBRs on Si substrates [19][20][21] because the DBRs would induce tensile stress, leading to crack formation. Regarding AlN-GaN-based DBRs on Si substrates, Ishikawa et al 20) achieved crack-free DBR-based LEDs on Si substrates, but only three pairs of DBR structures were fabricated, and vertical-conducting DBR-LEDs were not realized, because of the insulating AlN and high-resistivity AlGaN layers and the large band offset at the AlN/Si interface.…”

mentioning

confidence: 99%

Vertical-conducting InGaN/GaN multiple quantum wells LEDs with AlN/GaN distributed Bragg reflectors on Si(111) substrate

Yang

Lin

Xiang

et al. 2014

Appl. Phys. Express

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In this study, crack-free InGaN/GaN multiple quantum well (MQW) LEDs with five-pair AlN/GaN distributed Bragg reflectors (DBRs) were grown on a Si(111) substrate using a linear compositionally graded AlGaN layer to compensate for tensile stresses. DBR-based LEDs exhibited higher light efficiency and better crystalline quality than non-DBR-based LEDs. Vertical-conducting DBR-based LEDs were realized using through-hole structure. Through-holes were formed from the n-GaN layer to the Si substrate and filled with metals, which connected the n-GaN layer and the Si substrate. Insulating AlN, high-resistivity AlGaN layers, and the large band offset at the AlN/Si interface were all shorted by the metal filled into the through-holes. Compared to DBR-based LED without through-holes, DBR-based LEDs with through-holes exhibited significantly better electrical and optical properties.

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High reflectivity AlGaN/AlN DBR mirrors grown by MOCVD

Cited by 13 publications

References 14 publications

Optical characterisation of InGaN-based microdisk arrays with nanoporous GaN/GaN DBRs

Optical characterisation of InGaN-based microdisk arrays with nanoporous GaN/GaN DBRs

Ultraviolet-C AlGaN Resonant-Cavity Light-Emitting Diodes with Thermal Stability Pipe-AlGaN-Distributed Bragg Reflectors

Vertical-conducting InGaN/GaN multiple quantum wells LEDs with AlN/GaN distributed Bragg reflectors on Si(111) substrate

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