High refresh rate and low power consumption AMOLED panel using top‐gate n‐oxide and p‐LTPS TFTs

Yonebayashi, Ryo; Tanaka, Kohei; Okada, Kuniaki; Yamamoto, Kaoru; Yamamoto, Keiichi; Uchida, Seiichi; Aoki, Tetsuhiko; Takeda, Yasuhiko; Furukawa, Hajime; Ito, Kazuatsu; Katoh, Hiromi; Nakamura, Wataru

doi:10.1002/jsid.888

Cited by 66 publications

(56 citation statements)

References 14 publications

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“…Figure 7A,B shows the stress variation in the IGZO pixel and GOA TFTs during hybrid‐backplane AMOLED operation at 120 and 1 Hz, respectively. Details of this hybrid‐backplane AMOLED panel operation has been described elsewhere 12 . At 120 Hz operation, each pixel initialized and programmed (refresh frame) in 120 times/s.…”

Section: Resultsmentioning

confidence: 99%

“…Details of this hybrid-backplane AMOLED panel operation has been described elsewhere. 12 At 120 Hz operation, each pixel initialized and programmed (refresh frame) in 120 times/s. During refresh frame, each pixel needs scan signal for initialization and data programming.…”

Section: Hybrid-backplane Amoled Panels Reliability Under Agingmentioning

confidence: 99%

“…[3][4][5][6][7][8][9][10][11] In our previous work, we reported our hybrid technology. 12 Figure 1A shows our proposed pixel circuit. In order to adapt low refresh rate driving, it is necessary to keep T4 gate potential given level during long pause period.…”

Section: Introductionmentioning

confidence: 99%

“…Some researchers have reported a hybrid pixel circuit of LTPS and oxide TFT (IGZO) to overcome this problem 3–11 . In our previous work, we reported our hybrid technology 12 . Figure 1A shows our proposed pixel circuit.…”

Section: Introductionmentioning

confidence: 99%

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Reliability improvement of IGZO‐TFT in hybrid process with LTPS

et al. 2021

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An AMOLED panel using hybrid backplane technology based on p-type low temperature polycrystalline silicon (p-LTPS) and n-type indium-galliumzinc-oxide (n-IGZO) thin-film transistors (TFTs) has been successfully manufactured. New pixel and Gate-on-Array (GOA) circuits were designed and fabricated using this technology. GOA with CMOS inverter is realized by utilizing both IGZO and p-LTPS. The hybrid backplane AMOLED panel can operate between 1 and 120 Hz, which enables both high refresh rate and low standby power display applications. Furthermore, the AMOLED panel lifetime has markedly enhanced by improving IGZO TFT's uniformity and reliability.

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Section: Resultsmentioning

confidence: 99%

Section: Hybrid-backplane Amoled Panels Reliability Under Agingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Reliability improvement of IGZO‐TFT in hybrid process with LTPS

et al. 2021

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“…Some researchers have reported a hybrid pixel circuit of LTPS and Oxide TFT (IGZO) to overcome this problem [2]. In our previous work, we reported our hybrid technology [3]. Figure 1 (a) shows our proposed pixel circuit.…”

Section: Introductionmentioning

confidence: 99%

7‐1: Distinguished Paper: Reliability Improvement of IGZO‐TFT in Hybrid Process with LTPS

Aman

Takeda

Ito

et al. 2021

Symp Digest of Tech Papers

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An AMOLED panel using hybrid backplane technology based on p‐type LTPS and n‐type oxide has been successfully manufactured. New pixel and Gate‐on‐Array (GOA) circuits were designed and fabricated using this technology. CMOS operation of the GOA is realized by utilizing both IGZO and p‐LTPS. The hybrid backplane AMOLED panel can operate between 1 Hz and 120 Hz, which enables both high refresh rate and low standby power display applications. Furthermore, the AMOLED panel lifetime has markedly enhanced by improving IGZO TFT's uniformity and reliability.

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High Mobility and Photo‐Bias Stable Metal Oxide Thin‐Film Transistors Engineered by Gradient Doping

Liu

et al. 2022

Adv Elect Materials

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Doping of oxygen‐deficient binder is an efficient way to alleviate the photo‐bias instability issue of oxide thin‐film transistors (TFTs). However, almost all dopants are working as electron suppressors and degrading mobility. Here we report an effective three‐level O‐anti|O|O‐N (OI|OII|N) gradient doping solution to overcome the adverse mobility‐stability trade‐off in N‐doped InGaZnO (IGZO:N) TFTs. 100 nm‐thick IGZO:OI|IGZO:OII|IGZO:N (IGZO:OI|OII|N) junctionless channel layers are fabricated by varying the partial pressures of oxygen and nitrogen doping gases. Best balance between improved performance and negligible degraded stability is first engineered by reducing the back‐channel IGZO:N depth close to the theoretical diffusion length of photo‐excited holes and forming two‐level graded IGZO:OII|N (40 nm|60 nm) TFTs. Much improved performance and comparable stability are further induced by incorporating ~1.5 nm percolation conduct IGZO:OI at the front‐channel to enhance accumulation. The three‐level graded IGZO:OI|OII|N TFTs exhibit high mobility (34.25 cm2 V−1 s−1) and good photo‐bias stability (∆Vth = −0.85 V@10 000 cd m−2, 3.0 h), which are 2~5‐fold superior to those of the controlled two‐level graded IGZO:OI|N TFTs, IGZO:OII|N TFTs, and homogeneous IGZO:OII TFTs, IGZO:N TFTs. The fabrication of high mobility and photo‐bias stable IGZO TFTs paves the way to future high‐performance oxide electronics.

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High refresh rate and low power consumption AMOLED panel using top‐gate n‐oxide and p‐LTPS TFTs

Cited by 66 publications

References 14 publications

Reliability improvement of IGZO‐TFT in hybrid process with LTPS

Reliability improvement of IGZO‐TFT in hybrid process with LTPS

7‐1: Distinguished Paper: Reliability Improvement of IGZO‐TFT in Hybrid Process with LTPS

High Mobility and Photo‐Bias Stable Metal Oxide Thin‐Film Transistors Engineered by Gradient Doping

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