High Reliability Challenges with Cu Wire Bonding for Automotive Devices in the AEC-Q006

Jeon, Junho; Na, SeokHo; Jeon, Seong Gyu; Mo, Mina; Kang, DaeByoung; Lim, KwangMo; Kim, Jinyoung

doi:10.1109/ectc.2017.263

Cited by 7 publications

(4 citation statements)

References 3 publications

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“…The bonding wire used in the automotive industry is expected to change from Au wire to Cu wire in the coming years [ 120 ], and the AEC have published a new document which specifies the minimum requirements for qualification of Cu wire interconnections used in automotive electronics applications [ 121 ]. PCC wire has been widely used in large scale integration circuit (LSI) packages, but conventional PCC wire is difficult to achieve the target of automotive application.…”

Section: Cu Bonding Wirementioning

confidence: 99%

Research Progress on Bonding Wire for Microelectronic Packaging

et al. 2023

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Wire bonding is still the most popular chip interconnect technology in microelectronic packaging and will not be replaced by other interconnect methods for a long time in the future. Au bonding wire has been a mainstream semiconductor packaging material for many decades due to its unique chemical stability, reliable manufacturing, and operation properties. However, the drastic increasing price of Au bonding wire has motivated the industry to search for alternate bonding materials for use in microelectronic packaging such as Cu and Ag bonding wires. The main benefits of using Cu bonding wire over Au bonding wire are lower material cost, higher electrical and thermal conductivity that enables smaller diameter Cu bonding wire to carry identical current as an Au bonding wire without overheating, and lower reaction rates between Cu and Al that serve to improve the reliability performance in long periods of high temperature storage conditions. However, the high hardness, easy oxidation, and complex bonding process of Cu bonding wire make it not the best alternative for Au bonding wire. Therefore, Ag bonding wire as a new alternative with potential application comes to the packaging market; it has higher thermal conductivity and lower electric resistivity in comparison with Cu bonding wire, which makes it a good candidate for power electronics, and higher elastic modulus and hardness than Au bonding wire, but lower than Cu bonding wire, which makes it easier to bond. This paper begins with a brief introduction about the developing history of bonding wires. Next, manufacturability and reliability of Au, Cu, and Ag bonding wires are introduced. Furthermore, general comparisons on basic performance and applications between the three types of bonding wires are discussed. In the end, developing trends of bonding wire are provided. Hopefully, this review can be regarded as a useful complement to other reviews on wire bonding technology and applications.

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Section: Cu Bonding Wirementioning

confidence: 99%

Research Progress on Bonding Wire for Microelectronic Packaging

et al. 2023

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“…Other literature also reported that the PCC wire improves bonding reliability under high temperature and high humidity and stressed environment due to the adjustment of controls for Cu-Al interdiffusion and specific IMCs formation [66,118,119]. The bonding wire used in the automotive industry is expected to change from Au wire to Cu wire in the coming years [120], and the AEC have published a new document which specifies the minimum requirements for qualification of Cu wire interconnections used in automotive electronics applications [121]. PCC wire has been widely used in large scale integration circuit (LSI) packages, but conventional PCC wire is difficult to achieve the target of automotive application.…”

Section: Reliability Of Cu Bonding Wirementioning

confidence: 99%

Emerging Micro Manufacturing Technologies and Applications

2023

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“…The main technique to produce thick copper film on silicon substrate is electrochemical deposition (ECD), which is a highly efficient wet process for depositing a uniform layer of metal (like copper) on a semiconductor wafer [5,6]. Furthermore, Cu front metal is very attractive for integrated circuit (IC) manufacturing because it enables high-reliable Cu-Cu wire bonding solution [7][8][9][10]. The integration of Cu into ICs is still a technical challenge due to the induced stress in back end of line structures [11,12] and due to the severe wafer warpage induced by Cu annealing, which affects the accuracy of the subsequent manufacturing processes, such as the wafer handle and the adsorption of vacuum suction cup, having also a negative impact on device reliability.…”

Section: Introductionmentioning

confidence: 99%

Warpage Behavior on Silicon Semiconductor Device: The Impact of Thick Copper Metallization

et al. 2021

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Electrochemical deposited (ECD) thick film copper on silicon substrate is one of the most challenging technological brick for semiconductor industry representing a relevant improvement from the state of art because of its excellent electrical and thermal conductivity compared with traditional materials, such as aluminum. The main technological factor that makes challenging the industrial implementation of thick copper layer is the severe wafer warpage induced by Cu annealing process, which negatively impacts the wafer manufacturability. The aim of presented work is the understanding of warpage variation during annealing process of ECD thick (20 μm) copper layer. Warpage is experimentally characterized at different temperature by means of Phase-Shift Moiré principle, according to different annealing profiles. Physical analysis is employed to correlated the macroscopic warpage behavior with microstructure modification. A linear Finite Element Model (FEM) is developed to predict the geometrically stress-curvature relation, comparing results with analytical models.

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High Reliability Challenges with Cu Wire Bonding for Automotive Devices in the AEC-Q006

Cited by 7 publications

References 3 publications

Research Progress on Bonding Wire for Microelectronic Packaging

Research Progress on Bonding Wire for Microelectronic Packaging

Emerging Micro Manufacturing Technologies and Applications

Warpage Behavior on Silicon Semiconductor Device: The Impact of Thick Copper Metallization

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