High-Reliability Dynamic-Threshold Source-Side Injection for 2-Bit/Cell With MLC Operation of Wrapped Select-Gate SONOS in nor-Type Flash Memory

A novel technique combination of ion bombardment (IB) and NH 3 plasma treatment (PT) has been presented to yield a highly effective charge storage layer for Si/SiO2/Si3N4/SiO2/Si (SONOS)-type nonvolatile memory applications. The IB technique creates additional trap sites within the charge storage layer strikingly to enhance the charge trapping/detrapping efficiency of the storage layer, and the NH 3 PT passivates shallow trap sites significantly to improve reliability characteristics. The distribution of trap sites corresponding with various energy levels is clearly described by discharge-based multipulse analysis. As compared with the control sample (without IB and NH 3 PT), the ionbombarded and NH 3 -plasma-passivated memory device has faster program/erase speeds and larger memory window. In addition, the competent reliability properties of the ion-bombarded and NH 3 -plasma-passivated memory, such as good endurance, long data retention, and acceptable disturbance, were also demonstrated in this letter.Index Terms-Discharge-based multipulse (DMP), Flash memory, ion bombardment (IB), metal/Al2O3/Si3N4/SiO2/Si (MANOS), NH 3 plasma treatment (PT).

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High-Reliability Dynamic-Threshold Source-Side Injection for 2-Bit/Cell With MLC Operation of Wrapped Select-Gate SONOS in nor-Type Flash Memory

Cited by 3 publications

References 13 publications

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A Novel Ion-Bombarded and Plasma-Passivated Charge Storage Layer for SONOS-Type Nonvolatile Memory

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