High resolution deep level transient spectroscopy and process-induced defects in silicon

Evans–Freeman, J.H.; Emiroglu, D.; Vernon–Parry, K.D.

doi:10.1016/j.mseb.2004.07.050

Cited by 1 publication

(3 citation statements)

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“…The peak is larger in specimen A than B and apparently absent in specimen C, its height correlating reasonably well with the expected oxygen concentrations at the dislocation cores inferred from their unlocking stresses. If the peak is indeed due to oxygen at the dislocation core it should exhibit properties more likely to be observed from deep levels in the vicinity of extended defects, such as an activation energy that changes with fill pulse length [5,13], and maybe more than one closely spaced electronic level contributing to the overall carrier emission [12]. The former can be tested by plotting Arrhenius plots from the DLTS data with different fill pulse lengths, and the latter by carrying out LDLTS.…”

Section: Resultsmentioning

confidence: 99%

“…The effect was also observed at 50 K in sample B, as mentioned above. However, there are possible alternative explanations related to multiple states at the dislocation core filling at different rates depending upon the occupancy of the other states [12].…”

Section: Resultsmentioning

confidence: 99%

“…Plotting the change in capacitance as a function of the logarithm of the fill pulse duration yields a straight line in the special case of emission from dislocation-related traps. High resolution Laplace DLTS (LDLTS) [11] has recently been applied to dislocated silicon [12] and showed a complex series of emission rates which were difficult to interpret. However, it was clear that the emission rate varied as the fill pulse length in the LDLTS experiment was varied.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

High resolution deep level transient spectroscopy applied to extended defects in silicon

Evans–Freeman

Emiroglu

Vernon–Parry

et al. 2005

J. Phys.: Condens. Matter

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Deep level transient spectroscopy (DLTS) and high resolution Laplace DLTS (LDLTS) have been applied to p-type Czochralski silicon that contains dislocations that have and that have not been locked by oxygen. The stressinduced dislocations have been immobilized by oxygen during heat treatment, which prohibits glide under certain applied shear stresses. The DLTS spectra show typical broad features between 100 and 320 K, characteristic of those seen in other dislocated silicon reported in the literature, and several components are present in the LDLTS spectra. In addition, DLTS spectra show a sharp narrow peak at 40 K at a rate window of 200 s −1 in the case of the locked dislocations, but not in the case of the sample where there is no oxygen locking. LDLTS shows that this deep level consists of more than one component and it is proposed that this peak is likely to be due to electrical activity associated with oxygen at the dislocation core. For hole emission at temperatures above 100 K, in the sample with unlocked dislocations, LDLTS detects a change of the emission rate of the carriers from some, but not all, of the components of the broad peak when the LDLTS fill pulse length is changed. This change is ascribed to band edge modification as the electronic states associated with the dislocation charge up during the fill pulse, and causes local electric field-driven emission of trapped charge during the reverse bias phase of the measurement. The LDLTS features which remain constant with fill pulse are proposed to be due to point defects in the material, which are not physically near dislocations.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%