High-resolution depth profiling of InxGa1−xAs/GaAs multiple quantum well structures by combination of secondary ion mass spectrometry and x-ray diffraction techniques

Abstract

Articles you may be interested inMicrobeam high-resolution x-ray diffraction in strained InGaAlAs-based multiple quantum well laser structures grown selectively on masked InP substrates J. Appl. Phys. 97, 063512 (2005); 10.1063/1.1862769 Ex-situ investigation of indium segregation in InGaAs/GaAs quantum wells using high-resolution x-ray diffraction J. Appl. Phys. 94, 7050 (2003); 10.1063/1.1621738 High-resolution x-ray and transmission electron microscopic analysis of a GaInAsSb/AlGaAsSb multiple quantum well laser structure J. Appl. Phys. 85, 7664 (1999); 10.1063/1.370569Interdiffusion in GaAs (1-x) Sb x /GaAs superlattices studied with high-resolution x-ray diffraction and secondary ion mass spectroscopyIn this work we investigate multiple quantum well semiconductor structures by secondary ion mass spectrometry ͑SIMS͒ and high-resolution x-ray diffraction measurements. The combined use of these techniques turns out to be a very powerful tool for an accurate investigation of both structural and chemical characteristics of complex structures consisting of thin alternating layers. We show that the x-ray data allow us to increase the accuracy of the SIMS analyses providing internal standards, for both depth scale and concentration calibration. This procedure allows us: ͑i͒ to determine accurate quantitative SIMS concentration profiles which lead to the determination of the elemental concentration in the quantum wells, ͑ii͒ the mole fraction and layer thickness of embedded layers, and ͑iii͒ also to investigate eventual segregation and diffusion phenomena occurring at the interfaces. Our procedure is demonstrated on a set of In x Ga 1Ϫx As/GaAs multiple quantum well structures grown by metalorganic chemical vapor phase epitaxy. The experiments, performed by secondary ion mass spectrometry and high-resolution x-ray diffraction measurements, as well as the methodology of the data analyses are discussed in detail. As the main result of our investigation we obtained the precise indium distribution in each of the investigated samples with an accuracy below 5% and the individual barrier and well layer thickness.

Photocorrosion metrology of photoluminescence emitting GaAs/AlGaAs heterostructures

“…The successful fabrication of such devices depends on the quality of semiconductor wafers that relies on advanced diagnostic and metrology tools frequently employed as post-growth interrogation about such parameters as layer thickness, interfacial roughness, material composition, density of carriers and interface traps, or Schottky barrier height (Schroder 2006). The most common methods employed for characterization of physical and chemical properties of semiconductor devices include x-ray diffraction (Gerardi et al 1997, Nakashima andTateno 2004), atomic force microscopy (AFM) (Oliver 2008), secondary ion mass spectroscopy (SIMS) (Gerardi et al 1997, Herrmann et al 2011, photo-voltage spectroscopy (Masut et al 1986, Kronik andShapira 2001), Auger electron spectroscopy (Rack et al 2000), scanning electron microscopy (SEM) (Linkov et al 2013), transmission electron microscopy (TEM) (Linkov et al 2013), reflectance spectroscopy (Wośko et al 2011), monolayer chemical beam etching (Tsang et al 1993) and x-ray photoelectron spectroscopy (XPS) (Vilar et al 2005, Hinkle et al 2009. Furthermore, current-voltage (I-V) and capacitance-voltage (C-V) measurements (Fleetwood et al 1993) have been employed to investigate device band structure (Watanabe 1985) and provide information about carrier concentration and distribution by employing electrochemical (Kaniewska and Slomka 2001) and photo-electrochemical profiling (Blood 1986).…”

Quantification of grafted poly(ethylene glycol)‐silanes on silicon by time‐of‐flight secondary ion mass spectrometry

“…TOF‐SIMS is a technique based on mass spectrometry and is therefore said not to be a quantitative technique. However, in spite of TOF‐SIMS not being a quantitative technique in principle, many workers have made extensive efforts to find ways to use TOF‐SIMS quantitatively 12–62. Whether or not TOF‐SIMS can be said to be quantitative is still debated.…”