1982
DOI: 10.1149/1.2123944
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High Resolution Electron Beam Negative Resist with Very Narrow Molecular Weight Distributions

Abstract: Positive resists, for example, p o l y m e t h y l m e t h a c r ylate (PMMA) have been found to be the best materials for electron beam lithography. The 250A linewidths can be fabricated on 225A thick films of P d -A u alloy (1). A 400A linewidth has been demonstrated on thick silicon substrates (2). In contrast with such high resolution patterns of positive resist, negative resists have been considered as being lower resolution materials (3, 4). The resolution of negative resists is obviously limited by seve… Show more

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Cited by 14 publications
(2 citation statements)
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“…In previous studies by us [4][5][6][7] and other research groups [10][11][12][13][14][15][16], in order to avoid any uncertainties, polystyrene with very narrow molecular weight distribution with PDI ≤ 1.06 has been utilized. Ku's paper published in 1969 also recommended polystyrene with narrow Mw distribution for EBL in order to avoid potential pinhole formation after development [17].…”
Section: Introductionmentioning
confidence: 99%
“…In previous studies by us [4][5][6][7] and other research groups [10][11][12][13][14][15][16], in order to avoid any uncertainties, polystyrene with very narrow molecular weight distribution with PDI ≤ 1.06 has been utilized. Ku's paper published in 1969 also recommended polystyrene with narrow Mw distribution for EBL in order to avoid potential pinhole formation after development [17].…”
Section: Introductionmentioning
confidence: 99%
“…Thus, PVS is easier to handle when carrying out a lithographic evaluation compared to ordinary cyclized polyisoprene negative resists [83,84].…”
Section: 2 Lithographic Characterizationmentioning
confidence: 99%