High-resolution electron microscopy of epitaxial layers and interfaces in the CaF2/Si(100) and CaF2/Si/CaF2/Si(100) heterosystems

Room temperature negative differential resistance of CdF2∕CaF2 double-barrier resonant tunneling diode structures grown on Si(100) substrates

“…10. A transition layer from ͑100͒ to ͑111͒ can be observed in the first grown 1.6-nm-thick CaF 2 layer as reported in Ref.…”