High Resolution Low kV SEM EDS – Breaking Convention with Low Working Distance EDS

Abstract

This is an Accepted Manuscript for the Microscopy and Microanalysis 2020 Proceedings. This version may be subject to change during the production process.

Quantitative SEM-EDS Analysis of Semi-Transparent Samples

“…Although 10 kV analysis was unsuccessful here, low kV EDS is still very much an attractive approach, especially since it does not require foreknowledge of the sample thickness or density. Since every element except H and He has at least one primary X-ray transition below 5 keV, low-energy EDS analysis is always possible, in principle, even when using incident beam energies below 10 keV [15,16]. However, low overvoltage ratios mean element identification relies mainly on L and M edge X-rays, which are prone to re-absorption, are generally not detected efficiently, tend to overlap with each other, and have peak shapes that may be affected by bonding.…”

“…We note SEM-EDS analysis can certainly be performed at beam energies below 10 keV, where composition analysis at high spatial resolution becomes possible [15,16]. Promising results from this active area of research suggest low kV analysis should almost always be a viable option for freestanding films, albeit with a number of caveats and additional considerations analysts must account for, as discussed below.…”