High-Resolution Multicolor Patterning of InP Quantum Dot Films by Atomic Layer Deposition of ZnO

Abstract

This paper presents the high-resolution (>2000 PPI) multicolor patterning of InP quantum dot films using a conventional photolithography process with a positive photoresist (PR). The solvent resistance of the quantum dot (QD) film is achieved by depositing an ultrathin ZnO layer through atomic layer deposition. This is different from previous studies, which lack highresolution patterning or compatibility with indium phosphide (InP) QDs owing to chemical weaknesses. By employing a positive PR with a photoacid generator, the side-by-side patterning process yields multicolor patterns of red-and green-colored InP-based QDs. Additionally, the stacking of each color QD film is achieved. The patterning process can be used to fabricate QD light-emitting diode devices without degrading their performance. This process can be used not only for thin (<100 nm) QD films, which are used in QD-LED devices, but also for thick (>1 μm) QD films, which can be used in the color-conversion layer with a backlight.

Advancements in semiconductor quantum dots: expanding frontiers in optoelectronics, analytical sensing, biomedicine, and catalysis

“…Despite the patterning process, the CQD film performance remained unaffected, and the resulting CQD-LED devices exhibited unchanged performance post-patterning. 109 The maskless lithography was employed for direct CQD patterning in the QLED fabrication process to create 3D CQD pockets that acted as isotropic encapsulation of CQDs, preventing edge ingress from the lateral sides of CQD films. The patterning process involved three iterations of the identical printing steps: (1) casting the resin, (2) projecting the UV pattern, and (3) removing the uncured resin (Fig.…”

ZnMgO Nanoparticles via Ultrasonic-Assisted Synthesis for Electron Transport Layer in InP-Based QD-LEDs

“…Specifically, the device structure can be either standard (ITO/organic hole injection and transport layer/QD/ZnO/Al) or inverted (ITO/ZnO/QD/organic hole transport layer (HTL)/MoO 3 /Al). The fact that both structures use a ZnO ETL indicates that ZnO is the best choice for QD-LED devices. − …”