High resolution positive-working molecular resist attached with alicyclic acid-leaving group

Yamada, Arisa; Hattori, Shinichi; Saito, Satoshi; Asakawa, Koji; Koshiba, Takeshi; Nakasugi, Tetsuro

doi:10.1117/12.851392

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Cited by 3 publications

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“…In the field of EBL particularly the groups of Shirota6, 16 and Ober8, 9, 17 employ various molecular glass resists. Moreover, using calix[4]resorcinarene derivatives Ueda et al18 could generate structures in the range of 40 nm, Yamada et al19 used a positive‐tone molecular glass resist material based on 1,3,5‐tris( p ‐( p ‐hydroxyphenyl)phenyl)benzene to produce half‐pitch 36 nm line space patterns utilizing a 100 kV electron beam tool, and Robinson et al20 created 20 nm lines with fullerene resists.…”

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confidence: 99%

Combinatorial Optimization of a Molecular Glass Photoresist System for Electron Beam Lithography

et al. 2011

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Electron beam lithography is a powerful technique for the production of nanostructures but pattern quality depends on numerous interacting process variables. Orthogonal gradients of resist composition, baking temperatures, and development time as well as dose variations inside writing fields are used to prepare ternary combinatorial libraries for an efficient stepwise optimization of a molecular glass negative tone resist system.

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