2009
DOI: 10.2494/photopolymer.22.609
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High Resolution Positive-Working Molecular Resist Derived from Truxene

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Cited by 10 publications
(2 citation statements)
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“…15 In particular, it has been used as a precursor to polyarenes, 16,17 liquid crystals 18,19 and hemifullerenes, 20,21 all of which have potential to be used in organic electronics. 22 Many truxene derivatives have been synthesised 23- 25 and utilized for their light emitting and light harvesting properties [26][27][28] while other analogues have found applications in dendrimers, [29][30][31] gels, 32,33 photoresists, 34,35 uorescent probes, 36,37 and two photon absorbers. 38,39 The B-N bond is quasi-isosteric and isoelectronic with the C]C bond, 40,41 except that it is more polarized 42 due to the difference in electronegativity between the B and N atoms.…”
Section: Introductionmentioning
confidence: 99%
“…15 In particular, it has been used as a precursor to polyarenes, 16,17 liquid crystals 18,19 and hemifullerenes, 20,21 all of which have potential to be used in organic electronics. 22 Many truxene derivatives have been synthesised 23- 25 and utilized for their light emitting and light harvesting properties [26][27][28] while other analogues have found applications in dendrimers, [29][30][31] gels, 32,33 photoresists, 34,35 uorescent probes, 36,37 and two photon absorbers. 38,39 The B-N bond is quasi-isosteric and isoelectronic with the C]C bond, 40,41 except that it is more polarized 42 due to the difference in electronegativity between the B and N atoms.…”
Section: Introductionmentioning
confidence: 99%
“…8,9 Thereafter, many negative-or positive-type molecular resist materials have been reported using various molecular glasses. [10][11][12][13][14] More than 10 years ago, C-4-hydoroxyphenylcalix [4]resorcinarene derivatives containing tert-butyl groups (CRA ph -COO t Bu) were investigated as positive-type alkaline developable molecular resists. However, a half-pitch (hp) resolution pattern of o100 nm was not achieved because CRAph derivatives do not have as much mechanical strength as a positive-type molecular resist under lithographic process conditions.…”
Section: Introductionmentioning
confidence: 99%