High resolution Rutherford Backscattering Spectrometry investigations of ZrO2 layer growth in the initial stage on native silicon oxide and titanium nitride

Vieluf, Maik; Munnik, F.; Neelmeijer, C.; Kosmata, Marcel; Teichert, S.

doi:10.1016/j.tsf.2012.04.086

Cited by 6 publications

(3 citation statements)

References 19 publications

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“…These data coincide well with high resolution RBS measurements which propose island growth for the first deposition cycles and linear growth after the coalescence of the islands. 11 The growth on a 20 nm TiN/Si-substrate differs significantly from the growth on native oxide although two growth phases (TiN-I and TiN-II) and no inhibition phase can be determined. The initial growth phase (TiN-I) is extended to 15 cycles and a higher growth rate of 0.41 Â 10 15 atoms/cm 2 , which is more than half a monolayer ZrO 2 , could be measured.…”

Section: A Growth Of Zro 2 On Si and Tin Substratesmentioning

confidence: 99%

Structural properties of as deposited and annealed ZrO2 influenced by atomic layer deposition, substrate, and doping

Weinreich

Wilde

Müller

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Thin ZrO2 films are of high interest as high-k material in dynamic random access memory (DRAM), embedded dynamic random access memory, and resistive random access memory as well as for gate oxides. Actually, ZrO2 is predicted to be the key material in future DRAM generations below 20 nm. Profound knowledge of pure and doped ZrO2 thin films, especially of the structural properties, is essential in order to meet the requirements of future devices. This paper gives a detailed overview about the structural properties of ZrO2 films in dependence of various process parameters. The study of atomic layer deposition (ALD) growth mechanisms of ZrO2 on a TiN-substrate in comparison to a Si-substrate covered with native oxide exhibits significant differences. Furthermore, the structural properti es crystallinity, surface roughness, and film stress are studied after the ALD deposition in dependence of the process parameters deposition temperature, layer thickness, and underlying substrate. Remarkable dependencies of the ZrO2 crystallization temperatures on the substrates are figured out. The structural properties after various annealing steps are monitored as well. The influence of doping by SiO2 and Al2O3 is studied, which is primarily used to keep the thin films amorphous during deposition

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Section: A Growth Of Zro 2 On Si and Tin Substratesmentioning

confidence: 99%

Structural properties of as deposited and annealed ZrO2 influenced by atomic layer deposition, substrate, and doping

Weinreich

Wilde

Müller

et al. 2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…Since conventional RBS with a depth resolution of $5-50 nm (Ref. 17) cannot be used to judge sub-nm diffusion of elements between layers, HR-RBS 18 was performed at the Ion Beam Center (IBC) of the Helmholtz-Zentrum Dresden-Rossendorf. In that scheme, C 2þ ions of 2.02 MeV hit the sample under an impact angle of 17.5 with respect to the surface and undergo (forward) scattering at the target nuclei.…”

Section: Methodsmentioning

confidence: 99%

Thermal stability of high-reflectance La/B-based multilayers for 6.x nm wavelength

Kuznetsov

Yakshin

Sturm

et al. 2017

Journal of Applied Physics

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We have investigated the thermal stability of La/B-based (LaN/La/B) multilayer structures with partial-layer nitridation of La, a method shown earlier to result in enhanced reflectivity. The structures were annealed in the temperature range 100-500 C for 70 h. They showed period drifts by 0.005 nm at 100 C to 0.06 nm at 500 C. A reflectivity loss of more than 2% was only observed after annealing above 300 C. The study included separate investigation of B-on-LaN and LaN-on-La-on-B interfaces.

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“…Conventional RBS is restricted to a resolution of ~5-50 nm. Thus, HR-RBS [38] is the only backscattering technique that can be used to obtain useful information about multilayers with individual layers that are just a few nm thick. The HR-RBS work was performed at the Helmholtz-Zentrum Dresden-Rossendorf's Ion Beam Centre (IBC).…”

Section: High-resolution Rutherford Backscattering (Hr-rbs)mentioning

confidence: 99%

Structure control of La/B multilayer systems by partial nitridation

Kuznetsov¹

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Valorisation …………………………………………………………………………………………………….………96 1.3.2 XRF X-ray fluorescence (XRF) spectrometry is used to determine the elemental composition of a sample [10]. One variant of this technique, known as total reflection X-ray fluorescence (TXRF) [11], can be used to detect nanoparticles deposited on a flat surface, for example, or to trace the positions of heavy ions in organic monolayers or thick Langmuir-Blodgett films [12-16]. The multilayer coatings used in monochromators are essential in the analysis of low intensity emittance, in the case of light elements such as Li, Be, B, C, N [10]. The latter elements have a relatively low fluorescence yield. This factor, coupled with strong absorption in the sample itself, greatly reduces the intensity of the measured signal. Accordingly, the detection of light elements with XRF is difficult without multilayer coatings. Compared to single layers, the multilayers used in energy-dispersive techniques have a higher integrated reflectivity (over the Bragg peak), which makes it possible to detect light elements. These materials make the fine-tuning of reflectivity, of the position, of the reflectionpeak wavelength and of the angle of incidence a matter of routine. For the purpose of detecting B (K emission line) at angles of incidence close to 45°, for example, La/B4C and Mo/B4C multilayers were used [17]. One XRF-based application (grazing-incidence X-ray reflectivity) involves the angular-dependent measurement of samples to give depth-profiles of selected elements and details of the density of individual layers [18]. With this technique, unlike secondary ion mass spectrometry (SIMS), XPS depthprofiling, Rutherford backscattering spectroscopy (RBS) and other methods that involve sample sputtering, the sample is not damaged by incident X-rays. It also means that the XRF yield (including angular-dependent information) can be measured inhouse (using a standard lab reflectometer with an X-ray tube), thus avoiding the need for restricted and expensive access to equipment at ion centres, synchrotrons, etc. The 1.4 Multilayers for wavelengths above 6.6 nm 1.4.1 The properties and interactions of materials Based on their optical properties (high contrast and low absorption of 6 nm light), La and B were selected [4]. However, LaB6-which is thermodynamically favourable (enthalpy of formation ΔH =-160 kJ/mol [23])-is formed in La/B multilayers [24, 25]. Chemical interactions between La and B result in the formation of interface zones between the layers in a stack, which reduces optical contrast and, as a result, reflectivity [26]. One way to limit compound formation in La/B multilayers is to intentionally deposit (or pre-deposit) the compound, instead of one (or both) of the layers. One requirement is that this compound should be thermodynamically stable, so that it will not dissolve if it interacts with the other layers in a stack. However, this can result in the formation of superfluous amounts of compound in the interface zones, which impairs optical contrast. The enthalpy...

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High resolution Rutherford Backscattering Spectrometry investigations of ZrO2 layer growth in the initial stage on native silicon oxide and titanium nitride

Cited by 6 publications

References 19 publications

Structural properties of as deposited and annealed ZrO2 influenced by atomic layer deposition, substrate, and doping

Structural properties of as deposited and annealed ZrO2 influenced by atomic layer deposition, substrate, and doping

Thermal stability of high-reflectance La/B-based multilayers for 6.x nm wavelength

Structure control of La/B multilayer systems by partial nitridation

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