High resolution Rutherford backscattering spectroscopy studies on Mo/Si multilayers

Heidemann, B.; Tappe, T.; Schmiedeskamp, B.; Heinzmann, Ulrich

doi:10.1016/0040-6090(93)90564-6

Cited by 9 publications

(3 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For a quantitative analysis of the multilayer composition we use therefore mainly the first Mo peak. As already has been found before [12], the Mo oscillations show an asymmetric peak shape. This is attributed to interlayers of mixed Mo and Si, which are considerably thicker at the Mo-on-Si than at the Si-on-Mo interface.…”

supporting

confidence: 59%

Interlayer composition and interface stability in Mo/Si multilayers studied with high-resolution RBS

Heidemann

Tappe

Schmiedeskamp

et al. 1994

Applied Surface Science

Self Cite

View full text Add to dashboard Cite

Mo/Si multilayers with a period thickness of ~ 7.5 nm have been fabricated by e--beam evaporation in UHV at a deposition temperature of 150°C [1]. At their interfaces interlayers of mixed Mo and Si are obtained which are thicker at the Mo-on-Si than at the Si-on-Mo interface. The composition of as-deposited Mo/Si multilayers and bilayers and changes in the composition after baking the samples have been studied with high-resolution RBS. Differences in the behaviour of the two interfaces with baking are observed. The interdiffusion of Mo and Si starts mainly at the Mo-on-Si interface. The thickness of the interlayer at the Mo-on-Si interface increases with baking temperature. With the increasing thickness the Si/Mo mixture in the interlayer changes from Mo-rich to Si-rich. After baking at temperatures higher than 600°C strong Si diffusion into Mo is observed for both interfaces.

show abstract

supporting

confidence: 59%

Interlayer composition and interface stability in Mo/Si multilayers studied with high-resolution RBS

Heidemann

Tappe

Schmiedeskamp

et al. 1994

Applied Surface Science

Self Cite

View full text Add to dashboard Cite

show abstract

“…Further investigations of similar Mo/Si multilayers show that the thickness of this interdiffusion layer depends on the substrate temperature during the deposition process. The molybdenum-rich stoichiometry of the Mo-Si interlayer, which has been used in the simulation of the small angle X-ray reflectivity, has been measured by concentration depth profiling with Rutherford backscattering (RBS) [16,171. The occurrence of interfacial layers which relative sharp interfaces in the MojSi multilayer system is also displayed by cross sectional HRTEM pictures (Fig.…”

Section: Experimental Results Of the Mo/si Multilayermentioning

confidence: 99%

Interface Stability and Silicide Formation in High Temperature Stable MoxSi1−x/Si Multilayer Soft X-Ray Mirrors Studied by Means of X-Ray Diffraction and HRTEM

Kleineberg

Stock

Kloidt

et al. 1994

Phys. Stat. Sol. (a)

Self Cite

View full text Add to dashboard Cite

Multilayer thin films consisting of alternatingpure molybdenum and silicon layers with layer thicknesses of a few nanometers are of increasing interest for soft X-ray optical applications in the wavelength region above the Si-L edge (i = 12.4 nm). In order to enhance the thermal and long term stability, which is of great importance for applications with high power soft X-ray sources, interdiffusion of molybdenum and silicon as a mechanism of thermal destruction of the multilayer system has to be reduced. For this purpose multilayers with absorber layers of two different Mo,Sil --x mixtures, Mo,,sSi,,,/Si and Moo,33Sio,6,/Si, and a double-layer thickness of about 7 nm are prepared by electron beam evaporation in a UHV system. The thermal stability for both systems is studied by post deposition annealing at different temperatures. For each temperature interdiffusion and interfacial roughness of the multilayers are examined by small angle X-ray diffraction (SAXD) at I = 0.154 nm, while the formation of nanocrystallites with lattice plane orientation parallel to the layer system is investigated by large angle X-ray diffraction (LAXD). In the case of the Mo,,;Si,,,/Si multilayer system these studies are completed by high resolution transmission electron microscopy (HRTEM) at multilayer cross sections and optical diffraction measurements (ODM).

show abstract

“…The interest in Mo as a material for thin film technology arises from its high stability either as single film or in layered structures and its good electronic conduction. These properties make it a suitable material for x-ray mirrors operating at high temperature [2][3][4]12 or interconnects in very large scale integration ͑VLSI͒ in nanoelectronics, where Mo has several advantages over the presently used metals. 5 The interface between Mo and Si plays an important role for the physical properties of these structures.…”

Section: Introductionmentioning

confidence: 99%

Electronic transport by ultrathin molybdenum layers buried in amorphous silicon

Latuske

Drüsedau

1998

Phys. Rev. B

View full text Add to dashboard Cite

Multilayers of the type Mo/a-Si:H and a-Si:H/Mo/a-Si:H were grown by magnetron sputtering ͑silicon and molybdenum͒ and plasma chemical vapor deposition ͑silicon͒, respectively. For a nominal Mo layer thickness between 0.1 and 34 nm, the temperature-dependent conductivity is investigated in the range between 10 and 300 K. The conductivity at 300 K of the films decreases from 5ϫ10 4 to 1ϫ10 Ϫ2 (⍀ cm) Ϫ1 with decreasing thickness. The thickness dependence of the conductivity is explained in terms of different mechanisms: grain boundary scattering for the thickest ͑nanocrystalline͒ films, surface scattering for the intermediate thickness ͑amorphous͒ films, and hopping between isolated Mo particles for the thinnest ͑discontinuous͒ films. For the interpretation of experimental data by scattering, an analytical solution of the Fuchs equation assuming pure diffusive scattering is presented. For Mo layers with 62% of bulk density, the conductivity of the nanocrystalline Mo layers is smaller than for amorphous Mo layers, which is related to the existence of free standing columns of the nanocrystalline Mo. The temperature-dependent conductivity of nanocrystalline layers with 93% of bulk density has a negative slope. For all amorphous films with a thickness of approximately 3 nm and for the nanocrystalline material with 62% of bulk density, the temperature-dependent conductivity is described by (T)ϰT 0.5 . With decreasing thickness, a gradual change from this law to a dependence according to (T)ϰexp͓Ϫ(T 0 /T)͔ n for the layers of minimum thickness is observed.

show abstract

High resolution Rutherford backscattering spectroscopy studies on Mo/Si multilayers

Cited by 9 publications

References 3 publications

Interlayer composition and interface stability in Mo/Si multilayers studied with high-resolution RBS

Interlayer composition and interface stability in Mo/Si multilayers studied with high-resolution RBS

Interface Stability and Silicide Formation in High Temperature Stable MoxSi1−x/Si Multilayer Soft X-Ray Mirrors Studied by Means of X-Ray Diffraction and HRTEM

Electronic transport by ultrathin molybdenum layers buried in amorphous silicon

Contact Info

Product

Resources

About