High-Resolution Secondary Electron Imaging of a FIB Prepared Si Sample with an Aberration Corrected Electron Microscope

Abstract

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Reduce the electron damage in atomic resolved SEM observation using aberration corrected electron microscope.

“…M. Konno, 1 T. Sato, 1 H. Inada, 2 K. Nakamura 2 and Y. Zhu 3 1. Global Application Center, Naka Manufacturing Division, Hitachi High-Technologies, 11-1, Ishikawa, Hitachinaka, Ibaraki, 312-0057, Japan 2.…”

High-resolution SEM Imaging with Aberration Correction for Highly Precise Measurement of Semiconductors

“…First, a small section (Size: 12 μm (W) × 7 μm (H) × 3 μm (D)) of the semiconductor transistor is extracted from the bulk sample and mounted on the specimen stub inside of the FIB specimen camber using the NB5000 FIB-SEM equipped with micro-sampling system [3]. Since the reduction of FIB damage is one of the most important issues for to obtaining quality SE images, final milling of the sample was carried out at 2 kV in which thickness of FIB damage layer was about 3 nm [4]. Figure 2 shows the angular dependency of SE signal images.…”