High resolution surface morphology measurements using EBSD cross-correlation techniques and AFM

Assessing strain mapping by electron backscatter diffraction and confocal Raman microscopy using wedge-indented Si

“…Here we extend the above comparisons, applying all four of EBSD, CRM, AFM, and FEA to a single test vehicle, a wedge indentation in a Si surface similar to those considered previously [17, 18], Fig. 1(a).…”

“…Surface deformation around a similar wedge indentation was measured using atomic force microscopy (AFM) and compared with the deformation inferred from EBSD and predicted by a simple indentation model; the two measurements and model were in good agreement [18]. (In some earlier studies, AFM topography measurements were correlated with CRM measurements adjacent to surface scratches and Vickers indentations in Si, but in a qualitative manner [20, 21]. )…”

“…Application of all four techniques further refines assessments of the accuracy and precision of EBSD and CRM strain microscopy. In addition, many other extensions to the previous works are made here, including: (a) the use of a FEA model that incorporates the elastic anisotropy of Si and a semi-elliptical indentation deformation zone that is more realistic [23] than the rectangular zone [24] used previously [18]; (b) self-consistent comparison of the strain fields determined from EBSD and CRM with that of the model, using AFM to adapt the FEA model parameters; (c) greater surface localization of the CRM measurements using a smaller excitation wavelength; and, (d) explicit consideration of the effects of depth convolution on EBSD and CRM outputs. The four techniques provide different levels of information regarding deformation and strain states, and of course all four have very different input requirements in order to generate a strain map.…”

Effect of reference point selection on microscopic stress measurement using EBSD

“…Validation of EBSD-based measurements has also been examined through comparisons with the other existing measurement methods, including atomic force microscopy (AFM) [33], confocal Raman microscopy [33], UV-Raman microscopy [34], neutron diffraction [35], and X-ray microdiffraction [36]. In addition, comparisons with the results of finite element simulations have been performed [27,37].…”

EBSD Strain Analysis of Epitaxial Si1-x Gex on Si

“…In this technique, cross-correlation methods are applied to high resolution EBSD patterns obtained from unstrained and strained points on the same planar sample in such a way that the crystal lattices at the two points can be accurately compared to determine lattice strain and rotation [2,3]. This study is part of a project to create a reference artifact consisting of a die of silicon partially covered with a coherent epitaxial film of Si 1-…”