High-resolution transmission electron microscopic study of highly oxygen doped silicon layer

Abstract

High resolution transmission electron microscopy (HRTEM) is the effective technique for characterization of detailed structure of semiconductor materials. Oxygen is one of the important impurities in semiconductors. Detailed structure of highly oxygen doped silicon has not clearly investigated yet. This report describes detailed structure of highly oxygen doped silicon observed by HRTEM. Both samples prepared by Molecular beam epitaxy (MBE) and ion implantation were observed to investigate effects of oxygen concentration and doping methods to the crystal structure.The observed oxygen doped samples were prepared by MBE method in oxygen environment on (111) substrates. Oxygen concentration was about 1021 atoms/cm3. Another sample was silicon of (100) orientation implanted with oxygen ions at an energy of 180 keV. Oxygen concentration of this sample was about 1020 atoms/cm3 Cross-sectional specimens of (011) orientation were prepared by argon ion thinning and were observed by TEM at an accelerating voltage of 400 kV.

New Computer Simulation Software of Electron Trajectories for Evaluation of Magnetic Field Immersion-Type Field Emission Gun

“…A number of studies about electron guns equipped with a magnetic lens have also been performed to realize a high-brightness electron source with a large probe current. [1][2][3][4] Moreover, a FEG with a preaccelerating magnetic lens has also been in practical use for a 1 MV fieldemission TEM. 5) In this high-voltage TEM, an electron beam is focused using the preaccelerating magnetic lens set beneath the electron source to reduce the angular divergence of the beam.…”