High-resolution x-ray diffraction of epitaxial bismuth chalcogenide topological insulator layers

Holý, V.; Kriegner, Dominik; Steiner, Hubert; Stangl, J.; Bauer, G.; Springholz, G.

doi:10.1088/2043-6254/aa5953

Cited by 7 publications

(2 citation statements)

References 16 publications

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“…It is capable of extracting information about the chemical composition and crystal structure parameters of the sample, its layers and lateral structure, crystal lattice mismatch, relaxation, defects, crystal size, texture etc. (Bowen & Tanner, 2018, 1998Holy ´et al, 2017;Hayashi et al, 2000;Bocchi et al, 1996;Zaumseil et al, 2011;Kaganer et al, 1997). The achievable resolution and, in general, the possibility of reconstructing the parameters of interest depend strongly on the correct choice of measurement configuration (Bowen & Tanner, 1998;Pietsch et al, 2004), namely an appropriate reflection and measurement geometry, as well as a suitable scan or reciprocal-space map (RSM), or a combination of several scans or RSMs.…”

Section: Introductionmentioning

confidence: 99%

Fisher information for optimal planning of X-ray diffraction experiments

Mikhalychev¹,

Zhevno²,

Vlasenko³

et al. 2021

J Appl Crystallogr

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Fisher information is a powerful mathematical tool suitable for quantification of data `informativity' and optimization of the experimental setup and measurement conditions. Here, it is applied to X-ray diffraction and an informational approach to choosing the optimal measurement configuration is proposed. The core idea is maximization of the information which can be extracted from the measured data set by the selected analysis technique, over the sets of accessible reflections and measurement geometries. The developed approach is applied to high-resolution X-ray diffraction measurements and microstructure analysis of multilayer samples, and its efficiency and consistency are demonstrated with the results of more straightforward Monte Carlo simulations.

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Section: Introductionmentioning

confidence: 99%

Fisher information for optimal planning of X-ray diffraction experiments

Mikhalychev¹,

Zhevno²,

Vlasenko³

et al. 2021

J Appl Crystallogr

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show abstract

“…However, these Bi-containing halide-based materials suffer from poor mechanical and chemical properties. 12,13 Bismuth chalcogenide semiconductors, such as Bi 2 S 3 and Bi 2 Se 3 , 5,14 exhibit high sensitivity to radiation as well as good mechanical properties; however, the narrow band gaps in these binary chalcogenides render them unsuitable for roomtemperature applications. 15 Previously, a Pb-based wide-bandgap semiconductor Pb 2 P 2 Se 6 was investigated as a radiation detection material.…”

Section: Introductionmentioning

confidence: 99%

Single-Crystal Bismuth Thiophosphate, BiPS₄, as a Nontoxic and Mechanically Robust X-ray Detector

Kandel

Webster

Hart

et al. 2021

ACS Appl. Mater. Interfaces

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Bismuth thiophosphate, BiPS4, is a promising nontoxic, high-density ternary chalcogenide semiconductor. Polycrystalline BiPS4 was synthesized from the stoichiometric melt of Bi, P, and S. Phosphorus was purified via an in-situ sublimation method. Single crystals of BiPS4 were grown using a modified vertical Bridgman method with a thermal gradient of 18 °C/cm. The material exhibits an electrical resistivity of 2 × 109 Ω·cm. The Knoop hardness of the single crystals is 128 ± 0.8 kg mm–2. A blocking contact behavior was observed with asymmetric contacts of Ga/BiPS4/Ag. A clear photocurrent response was observed from a BiPS4 crystal under an electric field as low as 1.14 V mm–1. Using a tungsten X-ray source, an X-ray sensitivity of 52 μ Gy–1 cm–2 was measured under an electric field of 80 V mm–1. When a single-crystal BiPS4 radiation detector device was used in a pulse-height radiation detection system, a clear charge collection response was observed under a 241Am α-particle radiation source.

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Potential thermoelectric materials of indium and tellurium co-doped bismuth selenide single crystals grown by melt growth technique

Hegde

Prabhu

Gao

et al. 2021

Journal of Alloys and Compounds

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High-resolution x-ray diffraction of epitaxial bismuth chalcogenide topological insulator layers

Cited by 7 publications

References 16 publications

Fisher information for optimal planning of X-ray diffraction experiments

Fisher information for optimal planning of X-ray diffraction experiments

Single-Crystal Bismuth Thiophosphate, BiPS₄, as a Nontoxic and Mechanically Robust X-ray Detector

Potential thermoelectric materials of indium and tellurium co-doped bismuth selenide single crystals grown by melt growth technique

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High-resolution x-ray diffraction of epitaxial bismuth chalcogenide topological insulator layers

Cited by 7 publications

References 16 publications

Fisher information for optimal planning of X-ray diffraction experiments

Fisher information for optimal planning of X-ray diffraction experiments

Single-Crystal Bismuth Thiophosphate, BiPS4, as a Nontoxic and Mechanically Robust X-ray Detector

Potential thermoelectric materials of indium and tellurium co-doped bismuth selenide single crystals grown by melt growth technique

Contact Info

Product

Resources

About

Single-Crystal Bismuth Thiophosphate, BiPS₄, as a Nontoxic and Mechanically Robust X-ray Detector