High-resolution X-ray diffraction study of laser lift-off AlGaN/GaN HEMTs grown by MOCVD method

Leung, Kam Lun; Chan, Ching Yuen; Fong, W.K.; Pilkuhn, M. H.; Schweizer, H.; Surya, C.

doi:10.1016/j.jcrysgro.2006.10.112

Cited by 5 publications

(3 citation statements)

References 9 publications

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“…The method allows direct integration of GaN device layers onto any substrate. Additionally, this method offers promise for bulk GaN substrate growth [10]. For example, the laser lift-off (LLO) technique has been used in an assembly of fluorescence-based microfluidic detection systems [11].…”

Section: Introductionmentioning

confidence: 99%

The influences of laser scanning speed on the structural and optical properties of thin GaN films separated from sapphire substrates by excimer laser lift-off

Tong¹,

Li²,

Zhang³

et al. 2009

J. Phys. D: Appl. Phys.

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Gallium nitride (GaN) films grown on sapphire substrates were successfully separated and transferred onto silicon (Si) substrates using the laser lift-off (LLO) process induced by an excimer pulsed laser. The structural and optical properties of the GaN films before and after LLO were characterized by x-ray diffraction, atomic force microscopy and Raman spectroscopy. The influences of the laser scanning speed on the structural and optical properties of thin GaN films before and after LLO have been studied, which demonstrated that the laser scanning speed alters the structural quality of the GaN films. The results show that the quality of GaN films is dependent on the LLO process parameter.

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Section: Introductionmentioning

confidence: 99%

The influences of laser scanning speed on the structural and optical properties of thin GaN films separated from sapphire substrates by excimer laser lift-off

Tong¹,

Li²,

Zhang³

et al. 2009

J. Phys. D: Appl. Phys.

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show abstract

“…Detailed experimental procedures can be found in a previous publication. 43 Figure 8a and b illustrate the XRD patterns for (002) reflection of a 5-period In x Ga 1-x N/GaN QW together with a simulated curve for both types N and C samples. The simulations were performed using the LEPTOS software based on the Recursive Matrix Formalism.…”

Section: ' Experimental Results and Discussionmentioning

confidence: 99%

“…HRXRD and 2D-reciprocal space mapping (2D-RSM) were used for the characterization of strain in the MQWs. Detailed experimental procedures can be found in a previous publication . Figure a and b illustrate the XRD patterns for (002) reflection of a 5-period In x Ga 1- x N/GaN QW together with a simulated curve for both types N and C samples.…”

Section: Resultsmentioning

confidence: 99%