High responsitivity intrinsic photoconductors based on AlxGa1−xN

Abstract

This letter reports on the fabrication and characterization of visible-blind ultraviolet photoconductors using single-crystal AlxGa1−xN layers deposited on basal plane sapphire substrates. With aluminum mole fractions ranging from 5% to 61%, the long-wavelength cutoff can be varied from 350 to 240 nm. Photoresponsitivities as high as several hundred amperes per watt were measured with 10 μm interelectrode spacing.

Characterization and Modeling of Photoconductive GaN Ultraviolet Detectors

“…x-1 N system should enable to develop UV detectors with a cut-off wavelength tunable from 366nm to 200nm [3] [4]. Applications range from space communications to ozone layer monitoring or flame detection.…”

Group-II acceptors in wurtzite AlN: A screened hybrid density functional study

“…[1][2][3][4][5] AlN is a leading candidate in high density optical data storage, high-resolution photolithography, and other LED applications operating in the ͑deep͒ UV region. 6,7 It has the widest direct gap ͑E g = 6.2 eV͒ among the group-III nitrides.…”

Performance enhancement of GaN metal–semiconductor–metal ultraviolet photodetectors by insertion of ultrathin interfacial HfO2 layer

“…[1][2][3] Various types of UV PD structures based on GaN are examined and among them metal-semiconductormetal (MSM) PD is a promising candidate due to its easy fabrication and compatibility with field effect transistor based electronics. [4][5][6][7][8] However, the performances of GaN based PDs are still not up to the expectation, due to the excessive leakage current because of high dislocation densities that exist in the GaN thin films. Several developments such as AlGaN/GaN metal-insulator-semiconductor PDs, AlGaN on Si inverted Schottky PDs and inverted AlGaN/GaN UV p-i-n PDs are demonstrated in this direction but most of them suffered from performance limitation especially low photoresponsivity.…”