High Responsivity and Response Speed Single‐Layer Mixed‐Cation Lead Mixed‐Halide Perovskite Photodetectors Based on Nanogap Electrodes Manufactured on Large‐Area Rigid and Flexible Substrates

Georgiadou, Dimitra G.; Lin, Yen‐Hung; Lim, Jongchul; Ratnasingham, Sinclair R.; McLachlan, Martyn A.; Snaith, Henry J.; Anthopoulos, Thomas D.

doi:10.1002/adfm.201901371

Cited by 46 publications

(37 citation statements)

References 63 publications

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“…Different metal combinations, such as Ti-Au 11 , Al-Al 13 , indium tin oxide-Al 14 or Pt-Al (Supplementary Fig. 1b,c,e,f), have also been demonstrated, with nanogap sizes being slightly larger (≈20 nm) than for Au-Al due to the limited process optimization we have performed so far with these metal combinations.…”

Section:  mentioning

confidence: 99%

100 GHz zinc oxide Schottky diodes processed from solution on a wafer scale

et al. 2020

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Inexpensive radiofrequency devices that can meet the ultrahigh-frequency needs of fifth-and sixth-generation wireless telecommunication networks are required. However, combining high performance with cost-effective scalable manufacturing has proved challenging. Here, we report the fabrication of solution-processed zinc oxide Schottky diodes that can operate in microwave and millimetre-wave frequency bands. The fully coplanar diodes are prepared using wafer-scale adhesion lithography to pattern two asymmetric metal electrodes separated by a gap of around 15 nm, and are completed with the deposition of a zinc oxide or aluminium-doped ZnO layer from solution. The Schottky diodes exhibit a maximum intrinsic cutoff frequency in excess of 100 GHz, and when integrated with other passive components yield radiofrequency energy-harvesting circuits that are capable of delivering output voltages of 600 mV and 260 mV at 2.45 GHz and 10 GHz, respectively.

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Section:  mentioning

confidence: 99%

100 GHz zinc oxide Schottky diodes processed from solution on a wafer scale

et al. 2020

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“…It is calculated by using Equation (), where A is the photosensitive area, I dark is the dark current, and e is the electronic charge. [ 39–41 ]

\begin{matrix} D^{*} = \frac{R \cdot A^{1 / 2}}{{false(2 e \cdot I_{dark} false)}^{1 / 2}} \end{matrix}

…”

Section: Figurementioning

confidence: 99%

Ultrathin Single‐Crystalline 2D Perovskite Photoconductor for High‐Performance Narrowband and Wide Linear Dynamic Range Photodetection

et al. 2020

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Originating from the breakthrough in discovering graphene (Gr), [1] 2D materials (2DMs) including transition metal dichalcogenide, [2,3] black phosphorous, [4] and others have been widely investigated in microscale photodetectors. By stacking multiple 2DMs into van der Waals (vdW) heterostructures, the photodetectors have demonstrated impressive 100 GHz highspeed response and 10 4 A W −1 highly sensitive photodetection performance. [5-7] Nonetheless, 2DM photodetectors usually response to broadband spectra located from ultraviolet to infrared light and exhibit linear dynamic ranges (LDRs) with merely several tens of decibels (dB) and less linearity, especially those who adopt photogating gain mechanism. [8-10] The dark current is reported from picoto microampere level, which corresponds to a current density from nA mm −2 to mA mm −2 level by considering the microscale photosensitive area of 2DM photodetectors. [11,12] It is much larger than that in commercial Si PIN photodetectors, which are generally below 100 pA mm −2. The high dark current also leads to a low on/ off ratio, which is not favorable in practical applications. Therefore, 2DM photodetectors have not met the demands in the next-generation Internet-of-Everything applications, such as artificial neural networks (ANN) image sensors, artificial retina, visible light communication (VLC), ultralowpower on-chip light interconnection, and flexible wearable devices, etc., which calls for filterless narrowband responses, wide LDRs, ultralow dark currents, and large on/off ratios. [13-19] 2D Ruddlesden-Popper-type organic-inorganic hybrid perovskites (2D-RPPs) are emerging light-harvesting and optoelectronic materials, which can be potential candidates to improve these performances. [20-22] 2D-RPPs are a family of organicinorganic hybrid perovskites (OIHPs), which share a similar corner-sharing octahedra network structure with 3D OIHPs (3DPs) as schematically illustrated in Figure 1a. [22,23] 3DPs have a general chemical formula of ABX 3 , where A is a monovalent organic cation [e.g., methylammonium (CH 3 NH 3 + , MA +)], B is a bivalent metal cation (e.g., Pb 2+ or Sn 2+), and X is a halide anion (e.g., Cl − , Br − , I −). An ABX 3 crystal consists of a network For next-generation Internet-of-Everything applications, for example, artificialneural-network image sensors, artificial retina, visible light communication, on-chip light interconnection, and flexible devices, etc., high-performance microscale photodetectors are in urgent demands. 2D material (2DM) photodetectors have been researched and demonstrated impressive performances. However, they have not met the demands in filterless narrowband photoresponse, wide linear dynamic range (LDR), ultralow dark current, and large on/off ratio, which are key performances for these applications. 2D Ruddlesden-Popper perovskites (2D-RPPs) are recently highlighted photovoltaic and optoelectronic materials. Embedding ultrathin 2D-RPPs into 2DM photodetectors holds potentials to improve these performances. Herein, a sin...

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“…To the best of our knowledge, the performance of the MA0.88Gua0.12PbI3 based transparent photodetectors reported here is the highest among the mixed cation perovskite-based photodetectors and transparent perovskite photodetectors (Table S1 and S2, ESI †). [46][47][48][49] Parameter at 0. The robust photodetector performance can be explained due to the formation of mixed-cation phase in MA0.88Gua0.12PbI3 where MA interacts with the Gua cations.…”

Section: Please Do Not Adjust Marginsmentioning

confidence: 99%

Large-area transparent flexible guanidinium incorporated MAPbI₃ microstructures for high-performance photodetectors with enhanced stability

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High Responsivity and Response Speed Single‐Layer Mixed‐Cation Lead Mixed‐Halide Perovskite Photodetectors Based on Nanogap Electrodes Manufactured on Large‐Area Rigid and Flexible Substrates

Cited by 46 publications

References 63 publications

100 GHz zinc oxide Schottky diodes processed from solution on a wafer scale

100 GHz zinc oxide Schottky diodes processed from solution on a wafer scale

Ultrathin Single‐Crystalline 2D Perovskite Photoconductor for High‐Performance Narrowband and Wide Linear Dynamic Range Photodetection

Large-area transparent flexible guanidinium incorporated MAPbI₃ microstructures for high-performance photodetectors with enhanced stability

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High Responsivity and Response Speed Single‐Layer Mixed‐Cation Lead Mixed‐Halide Perovskite Photodetectors Based on Nanogap Electrodes Manufactured on Large‐Area Rigid and Flexible Substrates

Cited by 46 publications

References 63 publications

100 GHz zinc oxide Schottky diodes processed from solution on a wafer scale

100 GHz zinc oxide Schottky diodes processed from solution on a wafer scale

Ultrathin Single‐Crystalline 2D Perovskite Photoconductor for High‐Performance Narrowband and Wide Linear Dynamic Range Photodetection

Large-area transparent flexible guanidinium incorporated MAPbI3 microstructures for high-performance photodetectors with enhanced stability

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Large-area transparent flexible guanidinium incorporated MAPbI₃ microstructures for high-performance photodetectors with enhanced stability