High Responsivity and Wavelength Selectivity of GaN‐Based Resonant Cavity Photodiodes

Li, Jing; Yang, Chao; Liu, Lei; Cao, Haicheng; Lin, Shan; Xi, Xin; Li, Xiaodong; Ma, Zhanhong; Wang, Kaiyou; Patanè, A.; Zhao, Lixia

doi:10.1002/adom.201901276

Cited by 32 publications

(22 citation statements)

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“…Moreover, as an ideal candidate for optoelectronic devices, GaN has been widely used in photodetectors and LEDs. [25][26][27][28] In this work, Ti 3 C 2 T X /(n/p)-GaN van der Waals heterostructures were fabricated and studied. Ultraviolet photoelectron spectroscopy (UPS) confirms that Ti 3 C 2 T X can form Schottky contacts with both n-GaN and p-GaN at room temperature.…”

mentioning

confidence: 99%

MXene‐GaN van der Waals Heterostructures for High‐Speed Self‐Driven Photodetectors and Light‐Emitting Diodes

Chen

Kang

et al. 2021

Adv Elect Materials

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lithium-ion batteries, [12,13] and electromagnetic interference shielding. [14,15] In addition to these above-mentioned applications, the excellent performance of MXenes makes them ideal for the research in MXene-semiconductor devices. [16] To be specific, MXenes colloidal solution can be fabricated into high-quality thin film through simple methods, such as drop casting and spin-coating, [17,18] thus simplifying the fabrication process of the devices. Besides, MXenes thin film possesses high transmittance and low sheet resistance, [19] which benefits their applications in photodetectors and LEDs. Moreover, the work function of MXene is adjustable in a large range from 2.14 to 5.65 eV, [20,21] which allows it to form Schottky junctions with different semiconductor materials, thereby broadening its application situations.So far, van der Waals heterostructures formed by other 2D materials (such as graphene and TMDs) and conventional semiconductor materials have been investigated widely in various fields and exhibits excellent characteristics. [22][23][24] However, van der Waals heterostructures fabricated by MXene and semiconductor materials have rarely been investigated so far and still need further study. Moreover, as an ideal candidate for optoelectronic devices, GaN has been widely used in photodetectors and LEDs. [25][26][27][28] In this work, Ti 3 C 2 T X /(n/p)-GaN van der Waals heterostructures were fabricated and studied. Ultraviolet photoelectron spectroscopy (UPS) confirms that Ti 3 C 2 T X can form Schottky contacts with both n-GaN and p-GaN at room temperature. By taking the advantages of the Ti 3 C 2 T X /(n/p)-GaN Schottky junctions, we fabricated high-speed photodetectors and stable orange LEDs, respectively. Under the illumination of a 365 nm light source with an intensity of 96.9 µW cm −2 , the Ti 3 C 2 T X /n-GaN photodetector shows a short rise time (60 ms) and decay time (20 ms), a high responsivity (44.3 mA W −1 ) and on/off ratio (≈11 300). And the Ti 3 C 2 T X /p-GaN LED device remains stable orange light emission under bias voltage from 4 to 22 V. We believe that this work gives an essential strategy for photodetectors and LEDs by taking the advantages of MXenes. Due to their excellent electrical conductivity, high transmittance, and adjustable work function, 2D transition-metal carbides and nitrides have shown great promise in optoelectronic applications, especially in MXenesemiconductor devices. In this work, Ti 3 C 2 T X /(n/p)-GaN van der Waals heterostructures are fabricated and studied. The Ti 3 C 2 T X /(n/p)-GaN Schottky junctions are confirmed by ultraviolet photoelectron spectroscopy (UPS) with a work function ≈4.2 eV of Ti 3 C 2 T X . Based on the Ti 3 C 2 T X /(n/p)-GaN Schottky junctions, high-speed photodetectors and stable orange light emitting diodes (LEDs) are fabricated. The Ti 3 C 2 T X /n-GaN heterostructure photodetector shows a short rise time (60 ms) and decay time (20 ms), a high responsivity (44.3 mA W −1 ) and on/off ratio (≈11300) under a light source of 365 nm wa...

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mentioning

confidence: 99%

MXene‐GaN van der Waals Heterostructures for High‐Speed Self‐Driven Photodetectors and Light‐Emitting Diodes

Chen

Kang

et al. 2021

Adv Elect Materials

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“…However, making a viable photonic circuit platform on silicon with efficient electrical injection in the GaN microdisks remains a challenge for this type of GaN integration [229,230]. With the development of porous GaN [208,231], which has a low refractive index, the WGM lasers with lateral porous GaN DBR have been proposed (Figures 18(e) and (f)) [232]. Compared with the traditional mushroom configuration, WGM lasers with porous GaN DBR not only have better device performance, but are more reliable, which lay a foundation for future photonic integration.…”

Section: Gan-based Optoelectronic Integrationmentioning

confidence: 99%

Recent progress of integrated circuits and optoelectronic chips

Xiang

Han

Zhang

et al. 2021

Sci. China Inf. Sci.

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Integrated circuits (ICs) and optoelectronic chips are the foundation stones of the modern information society. The IC industry has been driven by the so-called "Moore's law" in the past 60 years, and now has entered the post Moore's law era. In this paper, we review the recent progress of ICs and optoelectronic chips. The research status, technical challenges and development trend of devices, chips and integrated technologies of typical IC and optoelectronic chips are focused on. The main contents include the development law of IC and optoelectronic chip technology, the IC design and processing technology, emerging memory and chip architecture, brain-like chip structure and its mechanism, heterogeneous integration, quantum chip technology, silicon photonics chip technology, integrated microwave photonic chip, and optoelectronic hybrid integrated chip.

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“…It is noteworthy that GaN-based UV photodetectors have been grown along the conventional c-plane direction owing to availability of the lattice-matched substrates and the intrinsic growth direction [24][25][26][27][28]. Despite the high crystal quality of these devices, they still suffer from the inherit spontaneous and piezoelectric polarization, leading to a reduction in GaN-based photodetector detection and collection of photo-generated carries [7,9,20,29].…”

Section: Introductionmentioning

confidence: 99%

Non-Polar Gallium Nitride for Photodetection Applications: A Systematic Review

et al. 2022

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Ultraviolet photodetectors have been widely utilized in several applications, such as advanced communication, ozone sensing, air purification, flame detection, etc. Gallium nitride and its compound semiconductors have been promising candidates in photodetection applications. Unlike polar gallium nitride-based optoelectronics, non-polar gallium nitride-based optoelectronics have gained huge attention due to the piezoelectric and spontaneous polarization effect–induced quantum confined-stark effect being eliminated. In turn, non-polar gallium nitride-based photodetectors portray higher efficiency and faster response compared to the polar growth direction. To date, however, a systematic literature review of non-polar gallium nitride-based photodetectors has yet to be demonstrated. Hence, the objective of this systematic literature review is to critically analyze the data related to non-polar gallium nitride-based photodetectors. Based on the pool of literature, three categories are introduced, namely, growth and fabrication, electrical properties, and structural, morphological, and optical properties. In addition, bibliometric analysis, a precise open-source tool, was used to conduct a comprehensive science mapping analysis of non-polar gallium nitride-based photodetectors. Finally, challenges, motivations, and future opportunities of non-polar gallium nitride-based photodetectors are presented. The future opportunities of non-polar GaN-based photodetectors in terms of growth conditions, fabrication, and characterization are also presented. This systematic literature review can provide initial reading material for researchers and industries working on non-polar gallium nitride-based photodetectors.

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High Responsivity and Wavelength Selectivity of GaN‐Based Resonant Cavity Photodiodes

Cited by 32 publications

References 50 publications

MXene‐GaN van der Waals Heterostructures for High‐Speed Self‐Driven Photodetectors and Light‐Emitting Diodes

MXene‐GaN van der Waals Heterostructures for High‐Speed Self‐Driven Photodetectors and Light‐Emitting Diodes

Recent progress of integrated circuits and optoelectronic chips

Non-Polar Gallium Nitride for Photodetection Applications: A Systematic Review

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