High Responsivity Ge Phototransistor in Commercial CMOS Si-Photonics Platform for Monolithic Optoelectronic Receivers

Frounchi, Milad; Tzintzarov, George N.; Ildefonso, Adrian; Cressler, John D.

doi:10.1109/led.2020.3042941

Cited by 8 publications

(6 citation statements)

References 14 publications

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“… Comparison of responsivity and response time demonstrated for MOSFET-based phototransistors (waveguide-coupled: Ge 31 , Si 43 , black phosphorus 29 and MoS 2 42 , surface-illuminated: InGaAs 32 , graphene/QD 34 , perovskite/graphene 40 , graphene 39 , MoS 2 35 , WS 2 41 , In 2 Se 3 37 , and ReS 2 38 ), BJT-based phototransistors (waveguide-coupled: Ge 22 , 24 , surface-illuminated: Ge 25 ), and JFET-based phototransistors (waveguide-coupled: Ge 27 , surface-illuminated: Ge 28 ). …”

Section: Discussionmentioning

confidence: 99%

Ultrahigh-responsivity waveguide-coupled optical power monitor for Si photonic circuits operating at near-infrared wavelengths

et al. 2022

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A phototransistor is a promising candidate as an optical power monitor in Si photonic circuits since the internal gain of photocurrent enables high responsivity. However, state-of-the-art waveguide-coupled phototransistors suffer from a responsivity of lower than 103 A/W, which is insufficient for detecting very low power light. Here, we present a waveguide-coupled phototransistor operating at a 1.3 μm wavelength, which consists of an InGaAs ultrathin channel on a Si waveguide working as a gate electrode to increase the responsivity. The Si waveguide gate underneath the InGaAs ultrathin channel enables the effective control of transistor current without optical absorption by the gate metal. As a result, our phototransistor achieved the highest responsivity of approximately 106 A/W among the waveguide-coupled phototransistors, allowing us to detect light of 621 fW propagating in the Si waveguide. The high responsivity and the reasonable response time of approximately 100 μs make our phototransistor promising as an effective optical power monitor in Si photonic circuits.

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Section: Discussionmentioning

confidence: 99%

Ultrahigh-responsivity waveguide-coupled optical power monitor for Si photonic circuits operating at near-infrared wavelengths

et al. 2022

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“…As a result of the change in the B-E potential, a large number of electrons injected from the emitter will diffuse across the base into the B-C depletion region and finally reach the collector region, considering that the base width is necessarily small to minimize recombination with any majority carrier holes in the base region. Therefore, the optical gain of PT can be calculated as [26],…”

Section: Device Structure and Simulationmentioning

confidence: 99%

“…Figure 4 demonstrates the calculated gain under dark and illumination (for a fixed optical power at λ = 2000 nm) as a function of baseemitter voltage The device exhibits relatively higher electrical current gain as compared with the optical gain. The relatively reduced optical is limited by two factors (a) efficiency [26] and (b) increased recombination in the base-emitter space-charge region [53]. Mathematically, it can also be explained using equations (1a) and (1b) (section 2).…”

Section: Gummel and Output Characteristics Of Ptsmentioning

confidence: 99%

“…However, the trade-off between the responsivity and 3 dB bandwidth due to a thicker intrinsic layer limits its performance. Moreover, avalanche PDs have also been reported for 2000 nm bands [25] but they require high reverse-biased voltage (more than −1 V) and also possess high noise which hampers the sensitivity of the device [26]. On the other hand, the common-emitter (C-E)-based three-terminals (3-Ts) phototransistors (PTs) can provide extremely high responsivity (due to its internal current gain) and 3 dB bandwidth while being biased with low voltages [27][28][29].…”

Section: Introductionmentioning

confidence: 99%

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Lateral GeSn waveguide-based homojunction phototransistor for next-generation 2000 nm communication and sensing applications

Kumar¹,

Chen²,

Tan³

2023

Semicond. Sci. Technol.

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This work reports a novel mid-infrared (MIR) lateral Ge1-xSnx (x = 6%) waveguide-based phototransistors (PTs) on a silicon platform. A lateral device structure is proposed to enhance the optical confinement factor (OCF) and the optical power through the i-GeSn waveguide, thereby, increasing the optical responsivity of the PTs. The proposed devices are investigated using multiphysics simulation. The designed PTs are investigated in terms of the Gummel and output characteristics under both dark and illumination, 3dB bandwidth, optical gain, and responsivity. The effect of lateral scaling on various figure-of-merits of PTs is also studied and in return, helps optimize the device structure to get the highest optical gain, responsivity, and 3-dB bandwidth at 2000 nm. The theoretically optimized PT achieves the maximum optical gain of 1650 and responsivity of about 308A/W at 2000 nm, with V_BE=0.3V and V_CE=1 V. In addition, the device exhibits a record-high 3-dB bandwidth of >55GHz. Thus, the encouraging electrical and optical performance of the proposed PT manifests it as a great potential candidate for the 2000 nm band.

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“…A phototransistor (PT) is a unique phototransducer that simultaneously conducts photoelectric conversion via photodiodes and electrical amplification via transistors within a single device, minimizing wiring resistance and capacitance between photodiodes and electrical amplifiers, noise increment, and energy dissipation. Several Ge-based phototransistors have been proposed, including heterojunction bipolar transistors, [8,9] photoMOSFETs, [10] PIN phototransistors, [11] and tunneling phototransistor [12−14]. However, many works simply focus on the device structure design and performance evaluation using numerical simulation.…”

Section: Introductionmentioning

confidence: 99%

Self-Aligned Transparent-Gate ITO/Germanium Nanospheres/SiO₂/SiGe-Nanosheets photoMOSFETs on Silicon Nitride Platform

Hong

Lee

Yang

et al. 2022

IEEE J. Electron Devices Soc.

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We report experimental fabrication and characterization of photoMOSFETs with self-aligned gatestacking heterostructures of indium-tin-oxide (ITO)/Ge nanospheres/SiO2-shell/Si1-xGex-nanosheets. Array of Genanosphere/SiO2-shell/SiGe-nanosheet heterostructures was created in a self-organized, CMOS approach using the thermal oxidation of lithographically-patterned poly-Si0.85Ge0.15 nanopillars over buffer layers of Si3N4 on top of SOI substrates. With a polysilicon dummy-gate, source and drain self-align with the transparent ITO gate using a replacement-metal-gate process. Very high photocurrent gain, large photoresponsivity, as well as improved input capacitance and 3dB frequency were experimentally achievable in our photoMOSFETs. The pivotal roles of Ge-optical gate and SiGe-channel for large photoresponsivity and current gains were analyzed via numerical simulation.

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High Responsivity Ge Phototransistor in Commercial CMOS Si-Photonics Platform for Monolithic Optoelectronic Receivers

Cited by 8 publications

References 14 publications

Ultrahigh-responsivity waveguide-coupled optical power monitor for Si photonic circuits operating at near-infrared wavelengths

Ultrahigh-responsivity waveguide-coupled optical power monitor for Si photonic circuits operating at near-infrared wavelengths

Lateral GeSn waveguide-based homojunction phototransistor for next-generation 2000 nm communication and sensing applications

Self-Aligned Transparent-Gate ITO/Germanium Nanospheres/SiO₂/SiGe-Nanosheets photoMOSFETs on Silicon Nitride Platform

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High Responsivity Ge Phototransistor in Commercial CMOS Si-Photonics Platform for Monolithic Optoelectronic Receivers

Cited by 8 publications

References 14 publications

Ultrahigh-responsivity waveguide-coupled optical power monitor for Si photonic circuits operating at near-infrared wavelengths

Ultrahigh-responsivity waveguide-coupled optical power monitor for Si photonic circuits operating at near-infrared wavelengths

Lateral GeSn waveguide-based homojunction phototransistor for next-generation 2000 nm communication and sensing applications

Self-Aligned Transparent-Gate ITO/Germanium Nanospheres/SiO2/SiGe-Nanosheets photoMOSFETs on Silicon Nitride Platform

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Product

Resources

About

Self-Aligned Transparent-Gate ITO/Germanium Nanospheres/SiO₂/SiGe-Nanosheets photoMOSFETs on Silicon Nitride Platform