High responsivity InP-InGaAs quantum-well infrared photodetectors: characteristics and focal plane array performance

Cellek, O.O.; Özer, Selçuk; Besikci, C.

doi:10.1109/jqe.2005.848947

Cited by 25 publications

(15 citation statements)

References 19 publications

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“…8) at low temperatures (14 K). As can be seen, the BLIP temperature of the device at a bias voltage of $3 V is about $70 K, similar to the reports on similar InP based QWIPs [6]. The spectral response of the device is shown in Fig.…”

Section: Qwip Characterizationsupporting

confidence: 84%

LWIR/SWIR switchable two color device based on InP/InGaAs integrated HBT/QWIP

Cohen

Gardi

Sarusi

et al. 2007

Infrared Physics & Technology

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Section: Qwip Characterizationsupporting

confidence: 84%

LWIR/SWIR switchable two color device based on InP/InGaAs integrated HBT/QWIP

Cohen

Gardi

Sarusi

et al. 2007

Infrared Physics & Technology

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“…These include lead salt alloys, InSb, QW IR detectors, QD IR detectors and type II superlattice (T2SL)-based detectors. Although significant effort has been devoted to developing these alternative IR technologies [2,11,[13][14][15][16][17][18][19][20][21][22][23][24], at this stage, HgCdTe IR detectors still dominate high performance IR systems. However, HgCdTe IR technology has its own challenges, including: (1) p-type doping control; (2) lower cost and larger array format size for FPAs; (3) higher operating temperatures; (4) multi-band detection; and (5) advanced plasma dry etching control.…”

Section: Ii-vi-based Irpdmentioning

confidence: 99%

Emerging technologies for high performance infrared detectors

2017

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Infrared photodetectors (IRPDs) have become important devices in various applications such as night vision, military missile tracking, medical imaging, industry defect imaging, environmental sensing, and exoplanet exploration. Mature semiconductor technologies such as mercury cadmium telluride and III-V material-based photodetectors have been dominating the industry. However, in the last few decades, significant funding and research has been focused to improve the performance of IRPDs such as lowering the fabrication cost, simplifying the fabrication processes, increasing the production yield, and increasing the operating temperature by making use of advances in nanofabrication and nanotechnology. We will first review the nanomaterial with suitable electronic and mechanical properties, such as two-dimensional material, graphene, transition metal dichalcogenides, and metal oxides. We compare these with more traditional lowdimensional material such as quantum well, quantum dot, quantum dot in well, semiconductor superlattice, nanowires, nanotube, and colloid quantum dot. We will also review the nanostructures used for enhanced lightmatter interaction to boost the IRPD sensitivity. These include nanostructured antireflection coatings, optical antennas, plasmonic, and metamaterials.

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“…Compared to conventional GaAs/AlGaAs QWIPs, lattice-matched InGaAs/InP QWIPs exhibit high photoconductive gain [8][9][10][11][12][13][14] but nonadjustable detection wavelength because of their fixed barrier height. The use of In x Ga 1-x As y P 1-y (InGaAsP) as the barrier material is superior to that of InP with regard to flexibility of the operating wavelength.…”

Section: Scientific Progress and Accomplishmentsmentioning

confidence: 99%

Photonic Crystal/Nano-Electronic Device Structures for Large Array Thermal Imaging

Tsui¹

2007

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The public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information.Send comments regarding this burden estimate or any other aspect of this collection of information, including suggesstions for reducing this burden, to Washington Headquarters Services, Directorate for Information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington VA, 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to any oenalty for failing to comply with a collection of information if it does not display a currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. a. REPORTFinal Report for ARO: "Photonic Crystal/Nano-Electronic Device Structures for Large Array Thermal Imaging" 14. ABSTRACT SECURITY CLASSIFICATION OF:Lattice-matched InGaAs/Inp quantum well infrared detector (QWIP) exhibits high photoconductive gain but un-adjustable detection wavelength because of its fixed barrier height. The use of InxGa1-xAsyP1-y (InGaAsP) as the barrier material is superior to that of InP with regard to the flexibility of operating wavelength. In this letter we investigate the application of InGaAsP material in the long-wavelength infrared detection. We report a broadband quantum well InGaAs/InGaAsP detector covering 8-14 m. The excellent agreement between the observed responsivity spectrum and the calculated one is achieved indicating the validness of our design model. In order to determine the usefulness of InGaAsP in long-wavelength detection, Approved for public release; Federal purpose rightsFinal Report for ARO: "Photonic Crystal/Nano-Electronic Device Structures for Large Array Thermal Imaging" Report Title ABSTRACTLattice-matched InGaAs/Inp quantum well infrared detector (QWIP) exhibits high photoconductive gain but un-adjustable detection wavelength because of its fixed barrier height. The use of InxGa1-xAsyP1-y (InGaAsP) as the barrier material is superior to that of InP with regard to the flexibility of operating wavelength. In this letter we investigate the application of InGaAsP material in the long-wavelength infrared detection. We report a broadband quantum well InGaAs/InGaAsP detector covering 8-14 m. The excellent agreement between the observed responsivity spectrum and the calculated one is achieved indicating the validness of our design model. In order to determine the usefulness of InGaAsP in long-wavelength detection, we also design a GaAs/AlGaAs quantum well detector with similar spectrum and compare its performance with that of the InGaAs/InGaAsP detector. The dark current noise measurement indicates that the gain in InGaAsP is 4.6 times larger than that of AlGaAs, showing that InGaAsP is a good candidate for long-wavelength high-speed infrared detection. Number of Non Peer-Reviewed Conference ...

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High responsivity InP-InGaAs quantum-well infrared photodetectors: characteristics and focal plane array performance

Cited by 25 publications

References 19 publications

LWIR/SWIR switchable two color device based on InP/InGaAs integrated HBT/QWIP

LWIR/SWIR switchable two color device based on InP/InGaAs integrated HBT/QWIP

Emerging technologies for high performance infrared detectors

Photonic Crystal/Nano-Electronic Device Structures for Large Array Thermal Imaging

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