High Responsivity IR Photodetector Based on CuO Nanorod Arrays/AAO Assembly

Chahrour, Khaled M.; Ahmed, Naser M.; Hashim, M.R.; Al-Diabat, Ahmad M.

doi:10.1016/j.proche.2016.03.016

Cited by 13 publications

(6 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The generation of charge carriers and the charge carrier transport mechanism of TMO and TMC nanomaterials are most favorable for photo sensitive device fabrication [ 2 ]. In previous reports TMO (MoO 3 , WO 3 , and CuO) and TMC (ZnS, MoS 2 , WS 2 and CuS) based photo detectors and are widely studied in terms of effect of morphology, concentration and temperature [ [3] , [4] , [5] , [6] ].…”

Section: Introductionmentioning

confidence: 99%

Photosensitive activity of fabricated core-shell composite nanostructured p-CuO@CuS/n-Si diode for photodetection applications

Gunasekaran¹,

Thangaraju

Marnadu

et al. 2021

Sensors and Actuators A: Physical

View full text Add to dashboard Cite

show abstract

Section: Introductionmentioning

confidence: 99%

Photosensitive activity of fabricated core-shell composite nanostructured p-CuO@CuS/n-Si diode for photodetection applications

Gunasekaran¹,

Thangaraju

Marnadu

et al. 2021

Sensors and Actuators A: Physical

View full text Add to dashboard Cite

show abstract

“…Carrier-selective hole conducting p-type oxides like copper oxide and nickel oxides are the less investigated ones, of which the copper oxide is a well-known metal oxide having no toxicity, high chemical stability, and abundant reserves and have been used in various other optoelectronic applications . The two principal oxides of copper, copper(II) oxide (Cu 2 O) and copper(I) oxide (CuO), have been well studied in various aspects of optoelectronic device applications like thin-film transistors, IR detectors, sensors, and photovoltaics. − The origin of p-type conductivity in these oxides is attributed to the negatively charged Cu vacancies and oxygen interstitials . CuO has also been used as an absorber layer in solar cell applications since it has a direct bandgap of 1.3–2.1 eV …”

Section: Introductionmentioning

confidence: 99%

Novel Boron-Doped p-Type Cu₂O Thin Films as a Hole-Selective Contact in c-Si Solar Cells

Markose

Shaji

Bhatia

et al. 2020

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

p-type Cu 2 O thin films doped with trivalent cation boron are demonstrated for the first time as an efficient hole-selective layer for c-Si heterojunction solar cells. Cu 2 O and Cu 2 O:B films were deposited by rf magnetron sputtering, and the optical and electrical properties of the doped and undoped films were investigated. Boron doping enhanced the carrier concentration and the electrical conductivity of the Cu 2 O film. The band alignment of the Cu 2 O:B/ Si heterojunction was investigated using XPS and UPS measurements. The Cu 2 O:B/Si interface has a valance band offset of 0.08 eV, which facilitates hole transport, and a conduction band offset of 1.35 eV, which blocks the electrons. A thin SiO x tunnel oxide interlayer was also explored as the passivation layer. The initial trials of incorporating this Cu 2 O:B layer as a hole transporting layer in a single heterojunction solar cell with the structure, ITO/Cu 2 O:B/n-Si/Ag, and a cell area of 1 cm 2 yielded an open-circuit voltage of 370 mV, a short-circuit current density of 36.5 mA/cm 2 , and an efficiency of 5.4%. This p-type material could find potential applications in various optoelectronic applications like organic solar cells, TFTs, and LEDs.

show abstract

“…Figure 6(c) shows that the overall current amplitude for this system of multiple nanowires is ∼2 orders of magnitude larger than that of the single nanowire. However, the I-V response is more asymmetric because the response of each Au/CuO NW/Au component is not identical as many previous studies reported [43,84,89]. Changes in dark current and photo-current after ns laser irradiation are, however, consistent with that occurring in the single Au/CuO NW/Au system.…”

Section: Resultsmentioning

confidence: 51%

“…Since the bandgap of CuO corresponds to the energy range of visible light, there have been many studies on the use of this material as a photodetector. In recent years, attention has focused on the use of CuO NWs in such applications [83][84][85][86]. To investigate the role that ns laser irradiation might play in improving the optoelectrical properties of the bridged Au/CuO NW/Au structure, the photo-current was measured before and after laser processing (figure 6) using a blue LED (460 nm) as a light source.…”

Section: Resultsmentioning

confidence: 99%

Laser modification of Au–CuO–Au structures for improved electrical and electro-optical properties

et al. 2022

View full text Add to dashboard Cite

CuO nanomaterials are one of the metal-oxides that received extensive investigations in recent years due to their versatility for applications in high-performance nano-devices. Tailoring the device performance through the engineering of properties in the CuO nanomaterials thus attracted lots of effort. In this paper, we show that nanosecond (ns) laser irradiation is effective in improving the electrical and opto-electrical properties in the copper oxide nanowires (CuO NWs). We find that ns laser irradiation can achieve joining between CuO NWs and interdigital gold electrodes. Meanwhile, the concentration and type of interband defects in CuO can be controlled by ns laser irradiation as well. An increase in the concentration of defect centers, together with a reduction in the potential energy barrier at the Au/CuO interfaces due to laser irradiation increases electrical conductivity and enhances photo-conductivity. We demonstrate that the enhanced electrical and photo-conductivity achieved through ns laser irradiation can be beneficial for applications such as resistive switching and photo-detection.

show abstract

High Responsivity IR Photodetector Based on CuO Nanorod Arrays/AAO Assembly

Cited by 13 publications

References 12 publications

Photosensitive activity of fabricated core-shell composite nanostructured p-CuO@CuS/n-Si diode for photodetection applications

Photosensitive activity of fabricated core-shell composite nanostructured p-CuO@CuS/n-Si diode for photodetection applications

Novel Boron-Doped p-Type Cu₂O Thin Films as a Hole-Selective Contact in c-Si Solar Cells

Laser modification of Au–CuO–Au structures for improved electrical and electro-optical properties

Contact Info

Product

Resources

About

High Responsivity IR Photodetector Based on CuO Nanorod Arrays/AAO Assembly

Cited by 13 publications

References 12 publications

Photosensitive activity of fabricated core-shell composite nanostructured p-CuO@CuS/n-Si diode for photodetection applications

Photosensitive activity of fabricated core-shell composite nanostructured p-CuO@CuS/n-Si diode for photodetection applications

Novel Boron-Doped p-Type Cu2O Thin Films as a Hole-Selective Contact in c-Si Solar Cells

Laser modification of Au–CuO–Au structures for improved electrical and electro-optical properties

Contact Info

Product

Resources

About

Novel Boron-Doped p-Type Cu₂O Thin Films as a Hole-Selective Contact in c-Si Solar Cells