High responsivity MSM black silicon photodetector

Su, Yuanjie; Li, Shibin; Wu, Zhiming; Yang, Yue; Jiang, Yadong; Jiang, Jing; Xiao, Zhanfei; Zhang, Peng

doi:10.1016/j.mssp.2012.11.008

Cited by 34 publications

(15 citation statements)

References 34 publications

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“…Y. Su et al [ 47 ] fabricated black silicon by MACE. The researchers first used alkaline etching to form micro columnar structures on the surface of silicon wafers.…”

Section: Fabrication Techniquesmentioning

confidence: 99%

Recent Progress of Black Silicon: From Fabrications to Applications

et al. 2020

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Since black silicon was discovered by coincidence, the special material was explored for many amazing material characteristics in optical, surface topography, and so on. Because of the material property, black silicon is applied in many spheres of a photodetector, photovoltaic cell, photo-electrocatalysis, antibacterial surfaces, and sensors. With the development of fabrication technology, black silicon has expanded in more and more applications and has become a research hotspot. Herein, this review systematically summarizes the fabricating method of black silicon, including nanosecond or femtosecond laser irradiation, metal-assisted chemical etching (MACE), reactive ion etching (RIE), wet chemical etching, electrochemical method, and plasma immersion ion implantation (PIII) methods. In addition, this review focuses on the progress in multiple black silicon applications in the past 10 years. Finally, the prospect of black silicon fabricating and various applications are outlined.

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“…Y. Su et al [ 47 ] fabricated black silicon by MACE. The researchers first used alkaline etching to form micro columnar structures on the surface of silicon wafers.…”

Section: Fabrication Techniquesmentioning

confidence: 99%

Recent Progress of Black Silicon: From Fabrications to Applications

et al. 2020

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“…Nanostructured NbN can potentially be utilized in other structures and metamaterials, like plasmonic nanoantennas [28], [29], to alter or improve sensitivity of the systems. Additionally, it is possible to combine nanostructured NbN not only with black silicon prepared by RIE but also with porous silicon prepared by various chemical methods [11]; to do that thinner Al2O3 and NbN should be used. However, more investigation into absorption mechanisms of nanostructured NbN should be conducted.…”

Section: Resultsmentioning

confidence: 99%

Wide-band ‘black silicon’ with atomic layer deposited NbN

et al. 2018

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Antireflection surfaces are often utilized in optical components to reduce undesired reflection and increase absorption. We report on black silicon (b-Si) with dramatically enhanced absorption over a broad wavelength range (250-2500 nm) achieved by applying a 10-15 nm conformal coating of NbN with atomic layer deposition (ALD). The improvement is especially pronounced in the near infrared (NIR) range of 1100-2500 nm where absorption is increased by >90%. A significant increase of absorption is also observed over the ultraviolet range of 200-400 nm. Preceding NbN deposition with a nanostructured ALD AlO (n-AlO) coating to enhance the NbN texture was also examined. Such texturing further improves absorption in the NIR, especially at longer wavelengths, strong absorption up to 4-5 μm wavelengths has been attested. For comparison, double side polished silicon and sapphire coated with 10 nm thick NbN exhibited absorption of only ∼55% in the NIR range of 1100-2500 nm. The results suggest a positive correlation between the surface area of NbN coating and optical absorption. Based on the wide-band absorption, the presented NbN-coated b-Si may be an attractive candidate for use in e.g. spectroscopic systems, infrared microbolometers.

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“…Recently, ultrafast laser hyperdoped silicon (b‐Si) has attracted much interest due to its distinctive properties and potential for a range of applications . In particular, b‐Si materials hyperdoped with chalcogens (e.g., S, Se, and Te) or transition metals (e.g., Ag, Au, and Ti) have gained considerable attention due to their strong visible and infrared absorption, with great potential in intermediate‐band solar cells, light emitters, gas sensors, and photodetectors . Devices fabricated with these materials have shown a remarkable enhancement in photon responsiveness, typically some orders of magnitude higher than that of traditional silicon photodetectors at low bias voltage.…”

Section: Introductionmentioning

confidence: 99%

Black Silicon Photodetector with Excellent Comprehensive Properties by Rapid Thermal Annealing and Hydrogenated Surface Passivation

Huang

Jia

et al. 2020

Advanced Optical Materials

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Silicon‐based photodetectors show attractive prospects due to their convenient preparation, high detectivity, and complementary metal–oxide–semiconductor compatibility. However, they are currently limited by low responsivity and sharp decay at sub‐bandgap wavelength. Although the aforementioned limitation can be partly solved by femtosecond laser processing, the surface defects and carrier activation rates result in a large dark current and narrow spectral response, which are unsatisfactory. Herein, rapid thermal annealing and hydrogenated surface passivation are introduced to elevate the broad‐bandgap responsivity and signal to noise ratio and to suppress the dark current. At optimal conditions, a sub‐bandgap responsivity of 0.80 A W−1 for 1550 nm at 20 V at room temperature is obtained, comparable with commercial germanium photodiodes and much higher than previously reported silicon photodiodes. Moreover, the prepared photodetector responded to spectral range from 400 to 1600 nm, with responsivity reaching 1097.60 A W−1 for 1080 nm at 20 V, which is the highest in reported silicon photodetectors. Simultaneously, the device shows competitive detectivity (1.22 × 1014 Jones at −5 V) due to the post‐processing procedures and suppressed dark current (7.8 μA at −5 V). The results show great prospects for black silicon in infrared light detection, night vision imaging, and fiber‐optic communication.

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High responsivity MSM black silicon photodetector

Cited by 34 publications

References 34 publications

Recent Progress of Black Silicon: From Fabrications to Applications

Recent Progress of Black Silicon: From Fabrications to Applications

Wide-band ‘black silicon’ with atomic layer deposited NbN

Black Silicon Photodetector with Excellent Comprehensive Properties by Rapid Thermal Annealing and Hydrogenated Surface Passivation

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