High responsivity of GaN p-i-n photodiode by using low-temperature interlayer

Lin, Jujian; Su, Yan–Kuin; Chang, Shoou‐Jinn; Lan, Wen−How; Huang, Kuo Chin; Chen, Wen-Ray; Huang, Chien-Chang; Lai, Wei Chih; Lin, Wen–Jen; Cheng, Y. C.

doi:10.1063/1.2800813

Cited by 33 publications

(11 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…III-V nitride semiconductors have attracted much attention on light emitting devices [1], photodetector [2][3][4][5], and high power and high frequency transistors. The bandgap energy of 0.6~0.8 eV was observed from Molecular beam epitaxy (MBE) and Metal organic chemical vapor deposition (MOCVD) grown InN samples by several research groups [6][7][8].…”

mentioning

confidence: 99%

In_0.11Ga_0.89N‐based p‐i‐n photodetector

Lee

Lin

et al. 2009

Phys. Status Solidi (c)

Self Cite

View full text Add to dashboard Cite

The InGaN photodetector with a In composition of i‐In0.11Ga0.89N active layer have been fabricated by MOCVD system. From the photoluminescence measurement, the FWHM of InGaN epitaxial layer was only 13.8 nm. The strong luminescence peak was located at wavelength of 399 nm. We also found that the FWHM of X‐ray diffraction of GaN and InGan layer were 218 and 350 arcsec, respectively. Clear photo‐responses are also observed in InGaN photodetector with 11% content at responsivity measurement. The cut‐off range of spectral responsivity was occurred at 400 nm. The highest spectral responsivity of photodetector was 0.206 A/W at wavelength of 380 nm. The rejection ratio was approached to 103. The external quantum efficiency was about 67%. The current density‐voltage (J‐V) characteristic of i‐InGaN p‐i‐n photodetector was measured. The dark and photo current density were 1.77×10‐4 A/cm2 and 4.5×10‐2 A/cm2 when biased at ‐3 V, respectively. At photovoltaic characteristics, the Voc and Jsc of the i‐InGaN photodetector are 1.63 V and 3.1×10‐2 A/cm2, respectively. The fill factor of i‐InGaN p‐i‐n photodetector was about 37%. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

mentioning

confidence: 99%

In_0.11Ga_0.89N‐based p‐i‐n photodetector

Lee

Lin

et al. 2009

Phys. Status Solidi (c)

Self Cite

View full text Add to dashboard Cite

show abstract

“…However, the crystalline quality of the bottom n-GaN and i-GaN layers cannot be improved by an LT-AlN interlayer. On the other hand, the GaN p-i-n PDs with an LT-GaN interlayer showed a dark current of 147 nA at the reverse bias of 40 V [15], which is larger than the dark current of detectors with an LT-AlN interlayer. Thus, comparing the results of these two structures, the less dislocations effect of the LT interlayer should not be responsible for dark current reducing in our GaN p-i-n detectors.…”

mentioning

confidence: 85%

Low Dark Current GaN p-i-n Photodetectors With a Low-Temperature AlN Interlayer

Lin

Chang

et al. 2008

IEEE Photon. Technol. Lett.

Self Cite

View full text Add to dashboard Cite

Abstract-GaN p-i-n ultraviolet (UV) photodetectors (PDs) with a low-temperature (LT)-AlN interlayer were proposed and fabricated. It was found that the dark current of such detectors is as small as 28pA even at a high reverse bias of 40 V. Although the high potential barrier at the AlN-GaN interface would slightly reduce the responsivity of PD under low reverse biases, the high UV-to-visible rejection ratio of the PD with an LT-AlN interlayer could be achieved under high reverse biases due to its very low dark current. The rejection ratio of the PD with the LT-AlN interlayer is as large as 735 at the reverse bias of 40 V.

show abstract

“…High reverse bias is needed to initiate the avalanche process in these materials. The evacuation rate of charge carriers from the depletion region is also slow [1,[4][5][6][7][8][9]. The excess noise factor (F) is reported to be in the range 4-5 for III-V materials and 2-3 for Si.…”

Section: Introductionmentioning

confidence: 99%