High Responsivity of Narrowband Photomultiplication Organic Photodetector via Interfacial Modification

Jia, Jiao; Zhang, Ye; Shi, Linlin; Li, Guohui; Ji, Ting; Wang, Wenyan; Wen, Rong; Hao, Yuying; Wang, Kaiying; Zhu, Furong; Cui, Yanxia

doi:10.1002/adom.202203132

Cited by 14 publications

(2 citation statements)

References 47 publications

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“…As we well known, J L of PM‐OPDs is primarily codetermined by hole transport and hole tunneling injection from the external circuit. [ 30,31 ] The interfacial trapped electron density near the Al electrode will strongly influence interfacial band bending for hole tunneling injection. Hole will be easily injected from the external circuit if the trapped electron density near Al electrode can be increased by employing a transparent interfacial layer.…”

Section: Resultsmentioning

confidence: 99%

Interfacial Engineering for Photomultiplication Type Organic Photodetectors with Signal‐Noise‐Ratio Over 89 000

Liu,

Yao,

et al. 2024

Advanced Optical Materials

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Photomultiplication type organic photodetectors (PM‐OPDs) exhibit obvious superiority in weak light detection due to their low dark current density (JD) and large photo‐induced current density (JPI). The JD is one of the important parameters that influences light detection sensitivity of PM‐OPDs, how to effectively suppress the JD is a great challenge to improve the performance of PM‐OPDs. In this work, the JD of PM‐OPDs can be suppressed by employing PTAA or doped‐PTAA as the interfacial layer replacing PEDOT:PSS layer. The PM‐OPDs with PTAA layer exhibit a low JD of 2.3 × 10−7 A cm−2 under −6 V bias, which is much smaller than 1.4 × 10−6 A cm−2 for PM‐OPDs with PEDOT:PSS layer. The small molecule DRCN5T is incorporated into PTAA to further passivate surficial defects of PTAA films, which is conducive to reducing the leakage current of PM‐OPDs. The optimal PM‐OPDs exhibit rather low JD of 8.4 × 10−8 A cm−2 under −6 V bias, as well as external quantum efficiency (EQE) of 31700% and specific detectivity (D*) of 1.2 × 1013 Jones at 370 nm. The signal‐noise‐ratio of optimal PM‐OPDs arrives to 89600 under −4.5 V bias under white light illumination with intensity of 1.5 mW cm−2.

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Section: Resultsmentioning

confidence: 99%

Interfacial Engineering for Photomultiplication Type Organic Photodetectors with Signal‐Noise‐Ratio Over 89 000

Liu,

Yao,

et al. 2024

Advanced Optical Materials

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“…It is usually observed in photoconductors or phototransistors where the gain is increased as electrons (or holes) are extracted slower than the other types of carriers. [42] Among the various photomultiplication methods, trap-assisted multiplication, which modulates trap states to control carrier extraction, has been studied to realize photomultiplication in photodiode structures [43] .…”

Section: Surface-mediated Photomultiplication In Cqd Solidsmentioning

confidence: 99%

Colloidal InAs Quantum Dot‐Based Infrared Optoelectronics Enabled by Universal Dual‐Ligand Passivation

Si,

Jee,

Yang

et al. 2024

Advanced Science

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Solution‐processed low‐bandgap semiconductors are crucial to next‐generation infrared (IR) detection for various applications, such as autonomous driving, virtual reality, recognitions, and quantum communications. In particular, III–V group colloidal quantum dots (CQDs) are interesting as nontoxic bandgap‐tunable materials and suitable for IR absorbers; however, the device performance is still lower than that of Pb‐based devices. Herein, a universal surface‐passivation method of InAs CQDs enabled by intermediate phase transfer (IPT), a preliminary process that exchanges native ligands with aromatic ligands on the CQD surface is presented. IPT yields highly stable CQD ink. In particular, desirable surface ligands with various reactivities can be obtained by dispersing them in green solvents. Furthermore, CQD near‐infrared (NIR) photodetectors are demonstrated using solution processes. Careful surface ligand control via IPT is revealed that enables the modulation of surface‐mediated photomultiplication, resulting in a notable gain control up to ≈10 with a fast rise/fall response time (≈12/36 ns). Considering the figure of merit (FOM), EQE versus response time (or −3 dB bandwidth), the optimal CQD photodiode yields one of the highest FOMs among all previously reported solution‐processed nontoxic semiconductors comprising organics, perovskites, and CQDs in the NIR wavelength range.

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Enhancing Photocurrent Efficiency in Filter‐Less NIR Organic Photodetectors Through a Photomultiplication‐Inducing Perovskite Quantum Dot Interlayer

Jeong,

Han,

Park

et al. 2024

Advanced Optical Materials

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A unique charge‐injection‐narrowing organic photodetector (CIN OPD) is demonstrated for near‐infrared (NIR) range operation. In conventional CIN OPDs, photomultiplication (PM) is achieved within a bulk heterojunction (BHJ) active layer with a donor:acceptor ratio of 100:1. Unfortunately, this approach encounters an issue in which the narrowband detection wavelength is determined solely by an excessive donor quantity. Consequently, the conventional devices face a critical limitation in that their detection range cannot extend to longer wavelengths. However, this limitation has been overcome through a novel mechanism and have fabricated a device that responds at λ = 940 nm. When a perovskite quantum dot interlayer is inserted as the PM‐inducing layer, PM occurs outside the active layer. Therefore, the BHJ active layer is structured with a donor:acceptor ratio of 50:50, resulting in an extension of the detection wavelength to the absorption tail of the narrow‐bandgap acceptor. The device demonstrates a remarkable external quantum efficiency (EQE) of 39 000% with a narrow full‐width at half‐maximum (FWHM) of 98 nm at 60 V. It also has a high specific detectivity and a short response time. The device represents a significant advancement in filter‐free, high‐efficiency photodetectors suitable for optical sensor applications such as light detection and ranging (LiDAR).

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High Responsivity of Narrowband Photomultiplication Organic Photodetector via Interfacial Modification

Cited by 14 publications

References 47 publications

Interfacial Engineering for Photomultiplication Type Organic Photodetectors with Signal‐Noise‐Ratio Over 89 000

Interfacial Engineering for Photomultiplication Type Organic Photodetectors with Signal‐Noise‐Ratio Over 89 000

Colloidal InAs Quantum Dot‐Based Infrared Optoelectronics Enabled by Universal Dual‐Ligand Passivation

Enhancing Photocurrent Efficiency in Filter‐Less NIR Organic Photodetectors Through a Photomultiplication‐Inducing Perovskite Quantum Dot Interlayer

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