High Responsivity of Zero-Power-Consumption Ultraviolet Photodetector Using 2D-MoS<sub>2</sub>/<i>i</i>-GaN Vertical Heterojunction

Veeralingam, Sushmitha; Sang, Liwen; Pang, Hong; Ma, Renzhi; Badhulika, Sushmee

doi:10.1021/acsphotonics.3c01250

ACS Photonics

2023

DOI: 10.1021/acsphotonics.3c01250

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High Responsivity of Zero-Power-Consumption Ultraviolet Photodetector Using 2D-MoS₂/i-GaN Vertical Heterojunction

Sushmitha Veeralingam,

Liwen Sang,

Hong Pang

et al.

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2024

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Cited by 3 publications

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Heterogeneous Integration of Wide Bandgap Semiconductors and 2D Materials: Processes, Applications, and Perspectives

Choi,

Kim,

Jeon

et al. 2024

Advanced Materials

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Wide‐bandgap semiconductors (WBGs) are crucial building blocks of many modern electronic devices. However, there is significant room for improving the crystal quality, available choice of materials/heterostructures, scalability, and cost‐effectiveness of WBGs. In this regard, utilizing layered 2D materials in conjunction with WBG is emerging as a promising solution. This review presents recent advancements in the integration of WBGs and 2D materials, including fabrication techniques, mechanisms, devices, and novel functionalities. The properties of various WBGs and 2D materials, their integration techniques including epitaxial and nonepitaxial growth methods as well as transfer techniques, along with their advantages and challenges, are discussed. Additionally, devices and applications based on the WBG/2D heterostructures are introduced. Distinctive advantages of merging 2D materials with WBGs are described in detail, along with perspectives on strategies to overcome current challenges and unlock the unexplored potential of WBG/2D heterostructures.

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Heterogeneous Integration of Wide Bandgap Semiconductors and 2D Materials: Processes, Applications, and Perspectives

Choi,

Kim,

Jeon

et al. 2024

Advanced Materials

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Enhancing photo-response performance through ultrathin Al2O3 modification at the p-SnO2:Al/n-GaN heterojunction interface

Shi,

Deng,

Jiang

et al. 2024

Optical Materials

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Recent advances in layered and non-layered 2D materials for UV detection

Ranjan,

Mazumder,

Ramakrishnan

2024

Sensors and Actuators A: Physical

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High Responsivity of Zero-Power-Consumption Ultraviolet Photodetector Using 2D-MoS₂/i-GaN Vertical Heterojunction

Cited by 3 publications

References 30 publications

Heterogeneous Integration of Wide Bandgap Semiconductors and 2D Materials: Processes, Applications, and Perspectives

Heterogeneous Integration of Wide Bandgap Semiconductors and 2D Materials: Processes, Applications, and Perspectives

Enhancing photo-response performance through ultrathin Al2O3 modification at the p-SnO2:Al/n-GaN heterojunction interface

Recent advances in layered and non-layered 2D materials for UV detection

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High Responsivity of Zero-Power-Consumption Ultraviolet Photodetector Using 2D-MoS2/i-GaN Vertical Heterojunction

Cited by 3 publications

References 30 publications

Heterogeneous Integration of Wide Bandgap Semiconductors and 2D Materials: Processes, Applications, and Perspectives

Heterogeneous Integration of Wide Bandgap Semiconductors and 2D Materials: Processes, Applications, and Perspectives

Enhancing photo-response performance through ultrathin Al2O3 modification at the p-SnO2:Al/n-GaN heterojunction interface

Recent advances in layered and non-layered 2D materials for UV detection

Contact Info

Product

Resources

About

High Responsivity of Zero-Power-Consumption Ultraviolet Photodetector Using 2D-MoS₂/i-GaN Vertical Heterojunction