High responsivity solar-blind UV photodetector based on single centimeter-sized Sn-doped β-Ga2O3 microwire

Qian, Feng; Dong, Zhengchao; Liu, Wei; Liang, Shuo; Yi, Ziqi; Xie, Jijia; Song, Zhe

doi:10.1016/j.micrna.2022.207255

Cited by 11 publications

(3 citation statements)

References 38 publications

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“…To increase the carrier concentration of Ga 2 O 3 films, elements such as Sn can be used for doping. For example, Mi et al [24] prepared Sn-doped β-Ga 2 O 3 thin films (Sn doping atomic ratio of 0−20%) on sapphire substrates using the MOCVD method, and the film resistivity decreased with increasing Sn doping concentration by five orders of magnitude when the doping concentration was 15%. Feng et al [25] prepared Sn-doped β-Ga 2 O 3 microfilaments by the conventional chemical vapor deposition technique, and prepared MSM photoelectric detectors based on a single β-Ga 2 O 3 microwire, with a response rate of 12 A/W and external quantum efficiency of 5887%.…”

Section: Introductionmentioning

confidence: 99%

Preparation of Sn-doped Ga₂O₃ thin films and their solar-blind photoelectric detection performance

Li¹,

Chengkun²,

Wang³

et al. 2023

J. Semicond.

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Sn doping is an effective way to improve the response rate of Ga2O3 film based solar-blind detectors. In this paper, Sn-doped Ga2O3 films were prepared on a sapphire substrate by radio frequency magnetron sputtering. The films were characterized by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and ultraviolet visible spectroscopy, and the effect of annealing atmosphere on the properties of films was studied. The Ga2O3 films changed from amorphous to β-Ga2O3 after annealing at 900 °C. The films were composed of micro crystalline particles with a diameter of about 5–20 nm. The β-Ga2O3 had high transmittance for wavelengths above 300 nm, and obvious absorption for solar-blind signals at 200–280 nm. The metal semiconductor metal type solar-blind detectors were prepared. The detector based on Sn-doped β-Ga2O3 thin film annealed in N2 has the best response performance to 254 nm light. The photo-current is 10 μA at 20 V, the dark-current is 5.76 pA, the photo dark current ratio is 1.7 × 106, the response rate is 12.47 A/W, the external quantum efficiency is 6.09 × 103%, the specific detection rate is 2.61 × 1012 Jones, the response time and recovery time are 378 and 90 ms, respectively.

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Section: Introductionmentioning

confidence: 99%

Preparation of Sn-doped Ga₂O₃ thin films and their solar-blind photoelectric detection performance

Li¹,

Chengkun²,

Wang³

et al. 2023

J. Semicond.

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“…Among WBG semiconductor-based solar-blind ultraviolet detectors, AlGaN, ZnMgO, diamond, β-Ga 2 O 3, ZnGa 2 O 4 , Zn 2 GeO 4 , In 2 Ge 2 O 7 , and LaAlO 3 have attracted a lot of attention . It has been challenging to create an aluminum-based WBG semiconductor due to its high defect density and aluminum content.…”

Section: Introductionmentioning

confidence: 99%

Ultrahigh Performance of β-Ga₂O₃-Based MSM Solar-Blind Photodetectors Fabricated via the Glancing Angle Deposition Technique

Yaghoubizadeh,

Eshraghi,

Hajati

et al. 2023

ACS Appl. Electron. Mater.

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Glancing angle deposition (GLAD) is a simple, cost-effective, and mask-free method for fabricating microstructures by controlling the morphological structure. In this study, we investigated the effect of the deposition angle on the growth of nanorod structures on P−Si (100) and quartz substrates using the RF-sputtering method. The X-ray diffraction (XRD) patterns of samples fabricated at various deposition angles of 0°, 45°, and 65°reveal the monoclinic structure of β-Ga 2 O 3 . As the flux angle of the sputtered atoms increased, the intensity and width of the (−110), (−202), and (111) planes decreased, while the intensity of the (−111) plane increased. Moreover, the photoluminescence spectra of β-Ga 2 O 3 nanocolumns showed five Gaussian bands with center wavelengths of 390, 434, 470, 494, and 525 nm, whose intensity is strongly affected by the deposition angle due to the increased path length of incident light. The characterization results of the fabricated metal−semiconductor−metal photodetector (MSM-PD) revealed the improvement of the optical properties of the sample deposited at a 65°oblique angle, which showed a responsivity of 95.28 A/W, a detectivity of 2.51 × 10 13 Jones, a quantum efficiency of 4.8 × 10 4 %, and a rise time of 44 ms for UVC light.

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“…2023年, Wang等 [11] 利用射频磁控溅射法在不同沉积温度下, 在蓝宝石衬底上制备了Zn掺杂 b-Ga 2 O 3 薄膜, 研究发现n掺杂b-Ga 2 O 3 薄膜为 p型, 但与未掺杂b-Ga 2 O 3 膜相比, Zn掺杂的b-Ga 2 O 3 膜的载流子浓度和迁移率都较低. 2021年, Zhang等 [12] 基于第一性原理和偶极子修正的理论计算得出, Cu掺杂b-Ga 卡片JCPDS 43-1012对比后 [13] , 而形成较高的光电流 [14] . 此外, 从图7(a)也可以看出, 器件具有很好的重复性和稳定性.…”

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Preparation and ultraviolet detection performance of Cu doped β-Ga2O3 thin films

Liu,

Feng,

et al. 2023

Acta Phys. Sin.

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A Solar-blind UV photodetectors (SBPs) have been attracting great attention due to their widely used in missile tracking, fire detection, biochemical analysis, astronomical observations, space-to-space communications, etc. At present, scholars are found that wide bandgap semiconductor materials such as AlxGa1-xN, Mg1Zn1-xO, diamond and β-Ga2O3are ideal semiconductor materials for developing high-performance SBPs. As the ultra-wide band gap semiconductor material, β-Ga2O3has the large band gap width of 4.9 eV, strong breakdown electric field, absorption edge located in the solar blind ultraviolet band (200-280 nm) and has high transmittance in the near ultraviolet and the whole visible band. Therefore, β-Ga2O3 is a very suitable material for making solar blind UV photodetectors. However, the p-type β-Ga2O3 is difficult to doping, which limits the further development of β-Ga2O3 devices. In this paper, the β-Ga2O3 thin films with different Cu doping contents were grown on sapphire substrates by chemical vapor deposition method, and the morphology, crystal structure and optical properties of β-Ga2O3 films were measured. The test results show that the surface of β-Ga2O3 films with different Cu contents is relatively smooth, and the (-201) diffraction peak positions shift to the lower degree side with increasing Cu content, which indicates that Cu2+ is substituted for Ga3+ into the β-Ga2O3 lattice. The optical absorption spectrum measurement indicated that the energy gaps of samples were evidently narrowed with increasing Cu doping concentration. Hall measurements results indicated that the Cu doped β-Ga2O3 thin films was p-type conductivity with a hole concentration of 7.36×1014, 4.83×1015 and 1.69×1016 cm−3, respectively. In addition, a photoconductive UV detector with MSM structure was prepared by evaporation of Au on a Cu-doped β-Ga2O3thin film, and its UV detection performance was studied. The results show that the photocurrent value of the devices increases with the increasing Cu contents. The Il/Id ratio is about 3.8×102 of 2.4% Cu content device under 254 nm light with at 10 V. The rise time and decay time of 0.11 s and 0.13 s, respectively. Furthermore, the responsivity and external quantum efficiency can reach up to 1.72 A/W and 841% under 254 nm light with a light intensity of 64 μW/cm2.

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High responsivity solar-blind UV photodetector based on single centimeter-sized Sn-doped β-Ga2O3 microwire

Cited by 11 publications

References 38 publications

Preparation of Sn-doped Ga₂O₃ thin films and their solar-blind photoelectric detection performance

Preparation of Sn-doped Ga₂O₃ thin films and their solar-blind photoelectric detection performance

Ultrahigh Performance of β-Ga₂O₃-Based MSM Solar-Blind Photodetectors Fabricated via the Glancing Angle Deposition Technique

Preparation and ultraviolet detection performance of Cu doped <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> thin films

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High responsivity solar-blind UV photodetector based on single centimeter-sized Sn-doped β-Ga2O3 microwire

Cited by 11 publications

References 38 publications

Preparation of Sn-doped Ga2O3 thin films and their solar-blind photoelectric detection performance

Preparation of Sn-doped Ga2O3 thin films and their solar-blind photoelectric detection performance

Ultrahigh Performance of β-Ga2O3-Based MSM Solar-Blind Photodetectors Fabricated via the Glancing Angle Deposition Technique

Preparation and ultraviolet detection performance of Cu doped <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> thin films

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Product

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Preparation of Sn-doped Ga₂O₃ thin films and their solar-blind photoelectric detection performance

Preparation of Sn-doped Ga₂O₃ thin films and their solar-blind photoelectric detection performance

Ultrahigh Performance of β-Ga₂O₃-Based MSM Solar-Blind Photodetectors Fabricated via the Glancing Angle Deposition Technique